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參數(shù)資料
| 型號： | SUY50N03-10CP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized |
| 中文描述： | N溝道30 V的（副），175C，MOSFET的脈寬調(diào)制優(yōu)化 |
| 文件頁數(shù)： | 4/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SUY50N03-10CP |
SUY50N03-10CP
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71700
S-05396
—
Rev. A, 21-Jan-02
0.50
0.75
1.00
1.25
1.50
1.75
2.00
–
50
–
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
–
Junction Temperature ( C)
V
SD
–
Source-to-Drain Voltage (V)
–
I
S
50
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
T
J
= 25 C
T
J
= 150 C
(
–
r
D
)
0
0
5
10
15
20
25
0
25
50
75
100
125
150
175
Safe Operating Area
V
DS
–
Drain-to-Source Voltage (V)
1000
10
0.1
1
10
100
0.01
100
Maximum Avalanche Drain Current
vs. Ambient Temperature
T
A
–
Case Temperature ( C)
–
I
D
1 ms
10 ms
10 s
100 s
–
I
D
1
0.1
Limited
by r
DS(on)
T
= 25 C
Single Pulse
100 ms
dc
1 s
10 s
100 s
2
1
0.1
0.01
10
–
4
10
–
3
10
–
2
10
–
1
1
10
600
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 40 C/W
3. T
JM
–
T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
100
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