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參數(shù)資料
| 型號： | SUY50N03-10CP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized |
| 中文描述： | N溝道30 V的（副），175C，MOSFET的脈寬調(diào)制優(yōu)化 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 53K |
| 代理商： | SUY50N03-10CP |
SUY50N03-10CP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71700
S-05396
—
Rev. A, 21-Jan-02
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 250 A
1
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 24 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 24 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 15 A
0.008
0.010
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 C
0.016
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 C
0.020
V
GS
= 4.5 V, I
D
= 15 A
0.0105
0.012
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
20
60
S
Dynamic
b
Input Capacitance
C
iss
1725
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
425
pF
Reversen Transfer Capacitance
C
rss
120
Total Gate Charge
c
Q
g
13
18
Gate-Source Charge
c
Q
gs
V
= 15 V,
V
= 4.5 V, I
= 15 A
DS
GS
4.5
nC
Gate-Drain Charge
c
Q
gd
D
4.0
Gate Resistance
R
G
1.7
Turn-On Delay Time
c
t
d(on)
10
15
Rise Time
c
t
r
V
DD
= 15 V, R
L
= 1
15 A, V
GEN
= 10 V, R
= 6
160
240
Turn-Off Delay Time
c
t
d(off)
I
D
30
45
ns
Fall Time
c
t
f
G
55
85
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
15
Pulsed Current
I
SM
100
A
Forward Voltage
a
V
SD
I
F
= 15 A, V
GS
= 0 V
0.85
12
V
Reverse Recovery Time
t
rr
I
F
= 15 A, di/dt = 100 A/ s
80
110
ns
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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