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參數(shù)資料
| 型號： | SUY50N03-10CP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C, MOSFET PWM Optimized |
| 中文描述： | N溝道30 V的（副），175C，MOSFET的脈寬調(diào)制優(yōu)化 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 53K |
| 代理商： | SUY50N03-10CP |
TrenchFET Power MOSFETS
PWM Optimized for High Efficiency
Buck Converter
– High Side
– Low Side
Synchronous Rectifier
– Secondary Rectifier
SUY50N03-10CP
Vishay Siliconix
New Product
Document Number: 71700
S-05396—Rev. A, 21-Jan-02
www.vishay.com
1
N-Channel 30-V (D-S), 175 C, MOSFET PWM Optimized
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
a
0.010 @ V
GS
= 10 V
15
30
0.012 @ V
GS
= 4.5 V
18
D
G
S
N-Channel MOSFET
Order Number:
SUY50N03-10CP
TO-251
S
G
D
Top View
Notes:
1. Drain Connected to Tab
2. Leads Trimmed to 0.092”
0.003”
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
15
Continuous Drain Current
(T
J
= 175 C)
a
T
A
= 100 C
I
D
14
Pulsed Drain Current
I
DM
100
A
Continuous Source Current (Diode Conduction)
a
I
S
20
T
C
= 25 C
71
b
Maximum Power Dissipation
T
A
= 25 C
P
D
8.3
a
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
15
18
Maximum Junction-to-Ambient
a
Steady State
R
thJA
40
50
C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.75
2.1
Notes:
a
b
Surface mounted on 1” x 1” FR4 Board, t
See SOA curve for voltage derating.
10 sec.
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