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參數(shù)資料
| 型號(hào)： | SUU50N03-12P |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | SUU50N03-12P |
FEATURES
D
TrenchFET
r
Power MOSFET
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
SUU50N03-12P
Vishay Siliconix
Document Number: 72429
S-31872—Rev. A, 15-Sep-03
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
a
30
0.012 @ V
GS
= 10 V
17.5
0.0175 @ V
GS
= 4.5 V
14.5
D
G
S
N-Channel MOSFET
Order Number:
SUU50N03-12P
TO-251
S
G
D
Top View
and DRAIN-TAB
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
A
= 25
_
C
I
D
17.5
T
A
= 100
_
C
12.4
Pulsed Drain Current
I
DM
40
A
Continuous Source Current (Diode Conduction)
a
I
S
5
Avalanche Current
L = 0 1 mH
L = 0.1 mH
I
AS
30
Single Pulse Avalanche Energy
E
AS
45
mJ
Maximum Power Dissipation
T
C
= 25
_
C
P
D
46.8
W
T
A
= 25
_
C
6.5
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
--55 to 175
_
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
≤
10 sec
R
thJA
18
23
Steady State
40
50
_
C/W
Maximum Junction-to-Case
R
thJC
2.6
3.2
Notes
a.
Surface Mounted on FR4 Board, t
≤
10 sec.
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