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參數(shù)資料
| 型號(hào)： | SUR70N02-04P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175C MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）175C MOSFET的 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 75K |
| 代理商： | SUR70N02-04P |
SUR70N02-04P
Vishay Siliconix
New Product
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.000
0.001
0.002
0.003
0.004
0.005
0.006
0.007
0
20
40
60
80
100
0
2
4
6
8
10
0
15
30
45
60
75
0
20
40
60
80
100
120
0
10
20
30
40
50
0
1000
2000
3000
4000
5000
6000
0
4
8
12
16
20
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
r
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C
)
g
V
DS
= 10 V
I
D
= 50 A
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
=
55 C
25 C
125 C
C
iss
I
D
Drain Current (A)
C
oss
(
r
)
0.6
0.8
1.0
1.2
1.4
1.6
50
25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
Junction Temperature ( C)
V
SD
Source-to-Drain Voltage (V)
I
100
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
T
J
= 25 C
T
J
= 150 C
0
10
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