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參數(shù)資料
| 型號： | SUR70N02-04P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) 175C MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）175C MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | SUR70N02-04P |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized for High Efficiency
100% R
g
Tested
APPLICATIONS
Synchronous Buck Converter
Low Side
Synchronous Rectifier
Secondary Rectifier
SUR70N02-04P
Vishay Siliconix
New Product
Document Number: 72776
S-32697—Rev. A, 19-Jan-04
www.vishay.com
1
N-Channel 20-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
20
0.0037 @ V
GS
= 10 V
37
0.0061 @ V
GS
= 4.5 V
29
D
G
S
N-Channel MOSFET
TO-252
Reverse Lead DPAK
Top View
Drain Connected to Tab
Ordering Information:
SUR70N02-04P—E3
SUR70N02-04P-T4—E3 (altrenate tape orientation)
S
G
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
A
= 25 C
T
C
= 25 C
I
D
37
a
70
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
I
AS
E
AS
100
A
37
Single Pulse Avalanche Current
L = 0 1 mH
L = 0.1 mH
30
Single Pulse Avalanche Energy
45
8.3
a
mJ
Maximum Power Dissipation
T
A
= 25 C
T
C
= 25 C
P
D
W
93
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
15
18
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
1.3
1.6
Notes
a.
b.
Surface Mounted on FR4 Board, t
Limited by package
10 sec.
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