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參數(shù)資料
| 型號： | SUR50N03-12P-T4-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 67K |
| 代理商： | SUR50N03-12P-T4-E3 |
FEATURES
TrenchFET Power MOSFET
PWM Optimized
100% R
g
Tested
APPLICATIONS
DC/DC Converters
High-Side, Desktop CPU Core
Synchronous Rectifiers
SUR50N03-12P
Vishay Siliconix
New Product
Document Number: 72774
S-32695—Rev. A, 19-Jan-04
www.vishay.com
1
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
30
0.012 @ V
GS
= 10 V
17.5
0.0175 @ V
GS
= 4.5 V
14.5
D
G
S
N-Channel MOSFET
TO-252
Reverse Lead DPAK
Top View
Drain Connected to Tab
Ordering Information:
SUR50N03-12P—E3
SUR50N03-12P-T4—E3 (altrenate tape orientation)
S
G
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
GS
30
V
Gate-Source Voltage
20
T
C
= 25 C
T
A
= 25 C
T
A
= 100 C
47
Continuous Drain Current
a
I
D
17.5
12.4
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
I
DM
I
S
I
AS
E
AS
40
5
Single Pulse Avalanche Current
L = 0 1 mH
L = 0.1 mH
30
Single Pulse Avalanche Energy
45
mJ
Maximum Power Dissipation
T
C
= 25 C
T
A
= 25 C
P
D
46.8
6.5
a
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
18
23
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
2.6
3.2
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
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| SUR50N03-16P | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
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