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參數(shù)資料
| 型號： | SUR50N03-06P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) 175C MOSFET |
| 中文描述： | N溝道30 V的（副）175葷MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 75K |
| 代理商： | SUR50N03-06P |
SUR50N03-06P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72182
S-32693—Rev. A, 19-Jan-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Static
Test Condition
Min
Typ
a
Max
Unit
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 0 V, V
GS
=
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
V
DS
= 5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 20 A
30
V
Gate Threshold Voltage
1.0
3.0
Gate-Body Leakage
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
1
50
A
On-State Drain Current
b
I
D(on)
50
A
0.0053
0.0065
0.0105
0.0095
Drain-Source On-State Resistance
b
Drain Source On State Resistance
r
DS(on)
0.0078
Forward Transconductance
b
Dynamic
a
g
fs
20
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
3100
565
255
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
pF
Gate Resistance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
1
1.9
3.1
21
10
7.5
12
12
30
10
30
= 15 V,
= 4.5 V, I
= 50 A
V
DS
V
GS
4.5 V, I
D
50 A
nC
20
20
45
15
V
= 15 V, R
= 0.3
50 A, V
GEN
= 10 V, R
= 2.5
ns
I
D
g
Pulsed Current
Diode Forward Voltage
b
I
SM
V
SD
t
rr
100
A
I
F
= 100 A, V
GS
= 0 V
I
F
= 50 A, di/dt = 100 A/ s
1.2
1.5
V
Source-Drain Reverse Recovery Time
35
70
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
40
80
120
160
200
0
2
4
6
8
10
0
20
40
60
80
100
0
1
2
3
4
5
Output Characteristics
Transfer Characteristics
V
DS
Drain-to-Source Voltage (V)
I
V
GS
Gate-to-Source Voltage (V)
I
25 C
55 C
5 V
T
C
= 125 C
V
GS
= 10 thru 6 V
3 V
4 V
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| SUR50N03-16P | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
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