參數(shù)資料
型號: SUR50N03-06P
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S) 175C MOSFET
中文描述: N溝道30 V的(副)175葷MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 75K
代理商: SUR50N03-06P
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
Optimized for Low-Side Synchronous
Rectifier Operation
100% R
g
Tested
APPLICATIONS
DC/DC Converters
Desktop CPU Core
Synchronous Rectifiers
SUR50N03-06P
Vishay Siliconix
New Product
Document Number: 72182
S-32693—Rev. A, 19-Jan-04
www.vishay.com
1
N-Channel 30-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
b
30
0.0065 @ V
GS
= 10 V
84
b
0.0095 @ V
GS
= 4.5 V
59
b
D
G
S
N-Channel MOSFET
TO-252
Reverse Lead DPAK
Top View
Drain Connected to Tab
Ordering Information:
SUR50N03-06P—E3
SUR50N03-06P-T4—E3 (altrenate tape orientation)
S
G
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
T
A
= 25 C
27
Continuous Drain Current
T
C
= 25 C
I
D
84
b
T
C
= 100 C
59
b
A
Pulsed Drain Current
I
DM
100
Continuous Source Current (Diode Conduction)
a
I
S
25
Maximum Power Dissipation
T
C
= 25 C
P
D
88
W
T
A
= 25 C
8.3
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction to Ambient
Maximum Junction-to-Ambient
a
t
10 sec
R
thJA
15
18
Steady State
40
50
C/W
Maximum Junction-to-Case
R
thJC
1.4
1.7
Notes
a.
b.
Surface Mounted on FR4 Board, t
Based on maximum allowable junction temperature, package limitation current is 50 A.
10 sec.
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