- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄365764 > SUR50N025-05P (Vishay Intertechnology,Inc.) N-Channel 25-V (D-S) MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | SUR50N025-05P |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | N-Channel 25-V (D-S) MOSFET |
| 中文描述： | N溝道25V（D-S）MOSFET |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 96K |
| 代理商： | SUR50N025-05P |
FEATURES
TrenchFET Power MOSFET
100% R
g
Tested
RoHS Compliant
APPLICATIONS
DC/DC Conversion, Low-Side
Desktop PC
Notebook PC
SUR50N025-05P
Vishay Siliconix
New Product
Document Number: 73379
s-50933—Rev. A, 09-May-05
www.vishay.com
1
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a, e
Q
g
(Typ)
25
0.0052 @ V
GS
= 10 V
0.0076 @ V
GS
= 4.5 V
89
30 nC
80
TO-252
Reverse Lead DPAK
Top View
Drain Connected to Tab
Ordering Information:
SUR50N025-05P—E3 (Lead (Pb)-Free)
SUR50N025-05P-T4—E3 (Lead (Pb)-Free, alternate tape orientation)
S
G
D
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V
DS
V
GS
25
20
89
a, e
75
a, e
36
b, c
30
b, c
100
55
7.7
b, c
45
101
83
a
58
a
11.5
b, c
8.0
b, c
55 to 175
V
T
C
= 25 C
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
Continuous Drain Current
(T
J
= 175 C)
I
D
A
Pulsed Drain Current
I
DM
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
T
C
= 25 C
T
A
= 25 C
I
S
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0 1 mH
L = 0.1 mH
I
AS
E
AS
mJ
T
C
= 25 C
T
C
= 70 C
T
A
= 25 C
T
A
= 70 C
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
b, d
t
10 sec
R
thJA
10
13
C/W
Maximum Junction-to-Case
Steady State
R
thJC
1.5
1.8
Notes:
a.
b.
c.
d.
e.
Based on T
= 25 C.
Surface mounted on 1” x 1” FR4 board.
t = 10 sec
Maximum under steady state conditions is 90 C/W.
Calculated based on maximum junction temperature. Package limitation current is 50 A.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SUR50N025-05P-E3 | N-Channel 25-V (D-S) MOSFET |
| SUR50N025-05P-T4-E3 | N-Channel 25-V (D-S) MOSFET |
| SUR50N03-06P | N-Channel 30-V (D-S) 175C MOSFET |
| SUR50N03-12P | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUR50N03-12P-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUR50N025-05P-E3 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET |
| SUR50N025-05P-T4-E3 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:N-Channel 25-V (D-S) MOSFET |
| SUR50N03-06P | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUR50N03-09P | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUR50N03-12P | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。