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參數(shù)資料
| 型號(hào)： | SUR50N025-05P-T4-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | N-Channel 25-V (D-S) MOSFET |
| 中文描述： | N溝道25V（D-S）MOSFET |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | SUR50N025-05P-T4-E3 |
SUR50N025-05P
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 73379
s-50933—Rev. A, 09-May-05
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
Safe Operating Area, Junction-to-Case
1000
10
0.1
1
10
100
0.1
100
I
D
1
1 ms
T
= 25 C
Single Pulse
10 ms
100 ms, dc
V
Drain-to-Source Voltage (V)
minimum V
GS
at which r
DS(on)
is
specified
*V
GS
10 s
100 s
0.000
0.005
0.010
0.015
0.020
0.025
0.030
2
3
4
5
6
7
8
9
10
1.0
1.2
0.001
10
100
0.00
0.2
V
SD
Source-to-Drain Voltage (V)
0.4
0.6
0.8
T
J
= 25 C
T
J
= 150 C
Source-Drain Diode Forward Voltage
I
S
I
D
= 20 A
On-Resistance vs. Gate-to-Source Voltage
V
GS
Gate-to-Source Voltage (V)
1.2
0.9
0.6
0.3
0.0
0.3
0.6
50
25
0
25
50
75
100
125
150
175
I
D
= 250 A
Threshold Voltage
T
J
Temperature ( C)
0
0.001
480
720
120
240
P
Time (sec)
600
10
1000
0.1
0.01
Single Pulse Power, Junction-to-Ambient
r
D
V
G
T
J
= 25 C
T
J
= 125 C
1
0.1
0.01
T
A
= 25 C
360
100
1
*Limited by r
DS(on)
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| SUR50N03-12P-T4-E3 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 30-V (D-S) MOSFET |
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