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參數(shù)資料
| 型號(hào)： | SUR50N025-05P-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | N-Channel 25-V (D-S) MOSFET |
| 中文描述： | N溝道25V（D-S）MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | SUR50N025-05P-E3 |
SUR50N025-05P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73379
s-50933—Rev. A, 09-May-05
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 250 A
25
V
V
DS
Temperature Coefficient
V
DS
/T
J
I
D
= 250 A
20
mV/ C
V
GS(th)
Temperature Coefficient
V
GS(th)
/T
J
6.0
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.4
2.4
V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 25 V, V
GS
= 0 V
1
A
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 10
V
10
On-State Drain Current
a
I
D(on)
V
DS
50
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 20 A
0.0042
0.0052
V
GS
= 4.5 V, I
D
= 15 A
0.0062
0.0076
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 15 A
65
S
Dynamic
b
Input Capacitance
C
iss
3600
Output Capacitance
C
oss
V
DS
= 12 V, V
GS
= 0 V, f = 1 MHz
790
pF
Reverse Transfer Capacitance
C
rss
430
Total Gate Charge
Q
g
V
DS
= 12 V,
V
GS
= 10 V, I
D
= 50 A
63
95
30
45
nC
Gate-Source Charge
Q
gs
V
DS
= 12 V,
V
GS
= 4.5 V, I
D
=
50 A
10.5
Gate-Drain Charge
Q
gd
10.5
Gate Resistance
R
g
f = 1 MHz
0.5
1.0
1.5
Turn-On Delay Time
t
d(on)
24
36
Rise Time
t
r
V
= 12 V, R
= 0.24
50 A, V
GEN
= 4.5 V, R
g
= 1
13
20
Turn-Off Delay Time
t
d(off)
I
D
24
36
Fall Time
t
f
7.5
12
ns
Turn-On Delay Time
t
d(on)
11
17
Rise Time
t
r
V
= 12 V, R
= 0.24
50 A, V
GEN
= 10 V, R
g
= 1
11
17
Turn-Off Delay Time
t
d(off)
I
D
29
44
Fall Time
t
f
8
12
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 C
55
A
Pulse Diode Forward Current
a
I
SM
100
Body Diode Voltage
V
SD
I
S
= 30 A
0.9
1.5
V
Body Diode Reverse Recovery Time
t
rr
34
51
ns
Body Diode Reverse Recovery Charge
Q
rr
= 20 A di/dt = 100 A/ s T
I
F
= 20 A, di/dt = 100 A/ s, T
J
= 25 C
25
38
nC
Reverse Recovery Fall Time
t
a
t
b
17
ns
Reverse Recovery Rise Time
17
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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