| 品牌 | 華晶 | 型號(hào) | CS6N70A3D-G |
| 封裝 | TO-251 | 用途 | CC/恒流 |
| 類(lèi)型 | 絕緣柵型場(chǎng)效應(yīng)管 | 溝道類(lèi)型 | N溝道 |
| 導(dǎo)電方式 | 增強(qiáng)型 | | |
SilICon N-Channel Power MOSFET
CS6N70A3D-G
○R Huajing Discrete Devices
General Description：
CS6N70A3D-G, the silicon N-channel Enhanced VDMOSFETs,
is obtained by the self-aligned planar Technology which reduce
the conduction loss, improve switching performance and enhance
the avalanche energy. The transistor can be used in various power
switching circuit for systemminiaturization and higher efficiency.
The package form is TO-251, which accords with the
RoHS standard.
Features：
l Fast Switching
l ESD Improved Capability
l Low Gate Charge (Typical Data:15.5nC)
l Low Reverse transfer capacitances(Typical:6pF)
l 100%Single Pulse avalanche energy Test
Applications：
Power switch circuit of adaptor and charger
總 機(jī):O512-5O71O709
傳 真:O512-5O1112O9
工廠專(zhuān)線(xiàn):1595O933O5O
貿(mào)易專(zhuān)線(xiàn):13914994568
Q Q:41086900
E-Mail:master@ksmcu.com
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以上是，華晶一級(jí)代理CS6N70A3D-G充電器MOS管6N70，品牌:華晶 型號(hào):CS6N70A3D-G 封裝:TO-251 用途:CC/恒流 類(lèi)型:絕緣柵型場(chǎng)效應(yīng)管 溝道類(lèi)型:N溝道 導(dǎo)電方式:增強(qiáng)型的信息