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參數(shù)資料
| 型號(hào)： | SUP90P06-09L-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S) 175C MOSFET |
| 中文描述： | P通道60 - V（下局副局長(zhǎng)）175C MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 55K |
| 代理商： | SUP90P06-09L-E3 |
SUP90P06-09L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73010
S-41203—Rev. A, 21-Jun-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
=
250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
=
60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
=
60 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
=
5 V, V
GS
=
10 V
120
A
V
GS
=
10 V, I
D
=
30 A
0.0074
0.0093
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
=
10 V, I
D
=
30 A, T
J
= 125 C
0.0150
V
GS
=
10 V, I
D
=
30 A, T
J
= 175 C
0.0190
V
GS
=
4.5 V, I
D
=
20 A
0.0094
0.0118
Forward Transconductance
a
g
fs
V
DS
=
15 V, I
D
=
30 A
20
S
Dynamic
b
Input Capacitance
C
iss
9200
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
=
25 V, f = 1 MHz
975
pF
Reversen Transfer Capacitance
C
rss
760
Total Gate Charge
c
Q
g
160
240
Gate-Source Charge
c
Q
gs
V
=
30 V,
V
=
10 V, I
=
90 A
DS
GS
40
nC
Gate-Drain Charge
c
Q
gd
D
36
Gate Resistance
R
g
f = 1.0 MHz
3
Turn-On Delay Time
c
t
d(on)
20
30
Rise Time
c
t
r
=
= 0.33
V
DD
30 V, R
L
0.33
90 A, V
GEN
=
10 V, R
= 2.5
190
285
ns
Turn-Off Delay Time
c
t
d(off)
I
D
140
210
Fall Time
c
t
f
g
300
450
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
90
A
Pulsed Current
I
SM
200
Forward Voltage
a
V
SD
I
F
=
50 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
60
90
ns
Peak Reverse Recovery Current
I
RM(REC)
I
=
50 A, di/dt = 100 A/ s
F
3
4.5
A
Reverse Recovery Charge
Q
rr
0.09
0.2
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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