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參數(shù)資料
| 型號(hào)： | SUP90N06-05L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 60-V (D-S) 175C MOSFET |
| 中文描述： | N通道60 - V（下副秘書(shū)長(zhǎng)）175葷MOSFET的 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | SUP90N06-05L |
SUP90N06-05L
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73037
S-41504—Rev. A, 09-Aug-04
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 60 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
=
20 A
0.0039
0.0049
Drain-Source On-State Resistance
a
r
DS(on)
0.0044
0.0055
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.0083
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.0103
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
30
S
Dynamic
b
Input Capacitance
C
iss
12900
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1060
pF
Reverse Transfer Capacitance
C
rss
700
Gate Resistance
R
g
f = 1.0 MHz
1.3
Total Gate Charge
c
Q
g
200
300
Gate-Source Charge
c
Q
gs
V
= 30 V,
V
= 10 V, I
= 90 A
DS
GS
50
nC
Gate-Drain Charge
c
Q
gd
D
33
Turn-On Delay Time
c
t
d(on)
22
35
Rise Time
c
t
r
V
= 30 V, R
= 0.33
90 A, V
GEN
= 10 V, R
g
= 2.5
130
200
ns
Turn-Off Delay Time
c
t
d(off)
I
D
110
165
Fall Time
c
t
f
280
420
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
90
A
Pulsed Current
I
SM
240
Forward Voltage
a
V
SD
I
F
= 90 A, V
GS
= 0 V
1.1
1.5
V
Reverse Recovery Time
t
rr
I
F
= 90 A, di/dt = 100 A/ s
90 A di/dt 100 A/
55
82
ns
Peak Reverse Recovery Current
I
RM(REC)
3.6
5.4
A
Reverse Recovery Charge
Q
rr
0.1
0.22
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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| SUP90N06-5M0P | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
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