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參數(shù)資料
| 型號： | SUM60N08-07C |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Current-Sensing Power MOSFETs |
| 中文描述： | 電流感應(yīng)功率MOSFET |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 68K |
| 代理商： | SUM60N08-07C |
AN606
Vishay Siliconix
www.vishay.com
2
Document Number: 71991
17-Dec-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
SENSE DIE
0
0.00
2
4
6
8
10
0.02
0.04
0.06
0.08
0.10
On-Resistance vs. Sense Current
I
SENSE
(A)
0
200
400
600
800
1000
1200
0
4
8
12
16
20
Current Ratio (I
(MAIN)/IS
)
vs. Gate-Source Voltage (Figure 1)
R
0
2
4
6
8
10
0
2
4
6
8
10
On-Resistance vs. Gate-Source Voltage
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
Gate-to-Source Voltage (V)
V
GS
Gate-to-Source Voltage (V)
I
D
= 10 mA
R
S
= 6.6
R
S
= 4.7
R
S
= 1.1
R
S
= 0.5
G
V
G
SENSE
S
KELVIN
R
S
R
S
= 2.2
FIGURE 2.
Current-Sensing Die Characteristics and Schematic
r
m
r
m
Definition of Current-Sensing Parameters
The current-sense ratio, r, is the quotient of the number of cells
terminated on the sense terminal to the total number of cells on
the MOSFET die.
To derive the value of
r
using the above definition requires
detailed die design. However, the quotient of drain current to
the sense current provides the same value because these
current values are the sum of cell current in each path.
Mathematically:
r = I
D
/I
SENSE
I
D
is drain current
I
SENSE
is the current flowing out of the sense terminal and into
the sense resistor, R
SENSE
Mirror active resistance, r
m(on)
, is the resistance of parallel
connected cells used in the sense chain when the device is on.
Being r
DS(on)
as in any other MOSFET, the value depends on
the gate drive, drain current, and junction temperature.
Accordingly, r
m(on)
is defined at given values of V
GS
, I
DRAIN
,
and T
J
junction.
By definition, for the sense die, refer to Figure 2. Mirror active
resistance r
m(on)
is specified at the gate-source voltages, V
GS
at 4.5 V and 10 V, corresponding drain-source current I
SENSE
up to 0.1 A, and junction temperature T
J
at 25
C. The
temperature coefficient of r
m(on)
is the same as that of r
DS(on)
.
Refer to the on-resistance vs. junction temperature curve in
Figure 3.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUM60N08-07T | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED) |
| SUM60N10-17 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175C MOSFET |
| SUM60N10-17_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) 175 ∑C MOSFET |
| SUM60N10-17-E3 | 功能描述:MOSFET 100V 60A 150W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM60N10-17-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
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