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參數(shù)資料
| 型號： | SUD10P06-280L |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 60-V (D-S), 175C MOSFET, Logic Level |
| 中文描述： | P通道60 -五（副），175 ? MOSFET的邏輯電平 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 46K |
| 代理商： | SUD10P06-280L |
SUD/SUU10P06-280L
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70780
S-20349
—
Rev. F, 18-Apr-02
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
=
–
250 A
–
60
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
=
–
250 A
–
1.0
–
2.0
–
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
=
–
60 V, V
GS
= 0 V
–
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
=
–
60 V, V
GS
= 0 V, T
J
= 125 C
–
50
A
V
DS
=
–
60 V, V
GS
= 0 V, T
J
= 175 C
–
150
On-State Drain Current
b
I
D(on)
V
DS
=
–
5 V, V
GS
=
–
10 V
–
10
A
V
GS
=
–
10 V, I
D
=
–
5 A
0.130
0.170
V
GS
=
–
10 V, I
D
=
–
5 A, T
J
= 125 C
0.31
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
=
–
10 V, I
D
=
–
5 A, T
J
= 175 C
0.375
V
GS
=
–
4.5 V, I
D
=
–
2 A
0.210
0.280
Forward Transconductance
b
g
fs
V
DS
=
–
15 V, I
D
=
–
5 A
6
S
Dynamic
Input Capacitance
C
iss
635
Output Capacitance
C
oss
V
DS
=
–
25 V,
V
GS
= 0 V, f = 1 MHz
100
pF
Reverse Transfer Capacitance
C
rss
30
Total Gate Charge
Q
g
11.5
25
Gate-Source Charge
Q
gs
V
=
–
30 V,
V
=
–
10 V, I
=
–
10 A
DS
GS
3.5
nC
Gate-Drain Charge
Q
gd
D
2
Turn-On Delay Time
c
t
d(on)
9
20
Rise Time
c
t
r
V
DD
=
–
30 V, R
L
= 3
10 A, V
GEN
=
–
10 V, R
= 2.5
16
20
Turn-Off Delay Time
c
t
d(off)
I
D
17
30
ns
Fall Time
c
t
f
G
19
35
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
a
Pulsed Current
I
SM
–
20
A
Forward Voltage
b
V
SD
I
F
= 10 A, V
GS
= 0 V
–
1.3
V
Reverse Recovery Time
t
rr
I
F
= 10 A, di/dt = 100 A/ s
50
80
ns
Notes:
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
Independent of operating temperature.
2%.
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| SUD15N06-90L | 功能描述:MOSFET 60V 15A 37W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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