參數(shù)資料
型號： STW15NA50
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOSFET)
中文描述： N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式快速功率MOSFET的）
文件頁數(shù)： 1/11頁
文件大?。?/td> 242K
代理商： STW15NA50
STH15NA50/FI
STW15NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 0.33
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE GHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
R
DS(on)
and gate charge, unequalled ruggedness
and superior switching performance.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.4
< 0.4
< 0.4
I
D
STH15NA50
STH15NA50FI
STW15NA50
500 V
500 V
500 V
14.6 A
9.3 A
14.6 A
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STH/STW15NA50
STH15NA50FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
500
V
V
DGR
500
V
V
GS
±
30
V
I
D
14.6
9.3
A
I
D
9.2
5.5
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
58.4
58.4
A
190
80
W
Derating Factor
1.52
0.64
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
4000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
TO-218
ISOWATT218
1
2
3
1
2
3
TO-247
1/11
相關(guān)PDF資料
PDF描述
STH15NB50FI N-Channel 500V-0.33Ω-14.6A - TO-247/ISOWATT218 PowerMESHTM MOS Transistors(Ｎ溝道ＭＯＳＦＥＴ)
STW15NB50 N-Channel 500V-0.33Ω-14.6A - TO-247/ISOWATT218 PowerMESHTM MOS Transistors(Ｎ溝道ＭＯＳＦＥＴ)
STH16NA40FI N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ溝道功率ＭＯＳ晶體管)
STW16NA40 N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ溝道功率ＭＯＳ晶體管)
STH18NB40FI N-Channel 400V-0.19Ω-18.4A- TO-247/ISOWATT218 PowerMESHTM MOSFET(N溝道MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STW15NB50 功能描述:MOSFET N-Ch 500 Volt 14.6 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW15NB50FI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET
STW15NK50Z 功能描述:MOSFET N-Ch 500 Volt 14 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW15NK90Z 功能描述:MOSFET N-Ch 900 Volt 15 Amp Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STW15NM60N 功能描述:MOSFET N Ch 600V 0.270 ohm 14A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*