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參數(shù)資料
| 型號(hào)： | STP3HNK90Z |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 900V - 3.5W - 3A TO-220 - TO-220FP Zener-Protected SuperMESHTM Power MOSFET |
| 中文描述： | N溝道900V - 3.5瓦- 3A到- 220 -到220FP齊納保護(hù)SuperMESHTM功率MOSFET |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 401K |
| 代理商： | STP3HNK90Z |
STP3HNK90Z - STF3HNK90Z
10/10
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its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
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previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
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| STP3LN62K3 | 功能描述:MOSFET N-Ch 620V 2.5 Ohm 2.5A SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP3LN80K5 | 功能描述:MOSFET N-CHANNEL 800V 2A TO220 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:管件 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:800V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:2A（Tc） 驅(qū)動(dòng)電壓（最大 Rds On，最小 Rds On）:10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時(shí)的柵極電荷?（Qg）（最大值）:2.63nC @ 10V Vgs（最大值）:±30V 不同 Vds 時(shí)的輸入電容（Ciss）（最大值）:102pF @ 100V FET 功能:- 功率耗散（最大值）:45W（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:3.25 歐姆 @ 1A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 供應(yīng)商器件封裝:TO-220 封裝/外殼:TO-220-3 標(biāo)準(zhǔn)包裝:1,000 |
| STP3N100 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP3N100FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP3N100XI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.6A I(D) | SOT-186VAR |
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