參數(shù)資料
型號(hào)： STLC1511
廠商： 意法半導(dǎo)體
英文描述： NorthenLite⑩ G.lite BiCMOS Analog Front-End Circuit
中文描述： NorthenLite⑩G.lite的BiCMOS模擬前端電路
文件頁數(shù)： 29/31頁
文件大?。?/td> 358K
代理商： STLC1511
29/31
STLC1511
4.6 Pin DC Electrical Specification
BT4CR is a CMOS tristate 4mA output pad buffer with slew rate control.
Table 24. General Interface Electrical Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Iil
Low level input current
Vi=0V
1
μ
A
Iih
High level input current
Vi=Vcc
1
μ
A
Ioz
Tri-state output leakage
1
<1>The leakage currents are generally very small, < 1nA. The value given here, 1mA, is a maximum that can occur after an ESD
stress.
Vo=0V or Vcc
1
μ
A
Table 25. CMOS Output Pad (BT4CR) DC Electrical Characteristics
1
,
2
<1>Characterized for VCC=3.0 to 3.6V. This pad must be characterized at VCC=5.0V+-5% and the table updated
<2>Assumes a 200mV voltage drop in both supply lines. This will not be the case in the STLC1511.
Parameter
Conditions
Min
Typ
Max
Unit
Vol
Low level output voltage
Iol=4mA
0.4
V
Voh
High level output voltage
Ioh=4mA
0.9*Vdd5
Vdd5
V
Table 26. TTL Input Pad (TLCHT) DC Electrical Characteristics
1
,
2
<1>Characterized for VCC=3.0 to 3.6V. This pad must be characterized at VCC=5.0V+-5% and the table updated
<2>Assumes a 200mV voltage drop in both supply lines. This will not be the case in the STLC1511.
Parameter
Conditions
Min
Typ
Max
Unit
Vil
Low level input voltage
0.8
V
Vih
High level input voltage
2.0
V
Vilhyst
Low level Threshold input falling
0.9
1.45
V
Vihyst
High level Threshold input rising
1.4
1.9
V
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