參數(shù)資料
型號(hào): STL34NF06
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 60V - 0.024ohm - 34A PowerFLAT⑩ LOW GATE CHARGE STripFET⑩II MOSFET
中文描述: N溝道60V的- 0.024ohm - 34A條的PowerFLAT⑩低柵極電荷STripFET第二MOSFET的⑩
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 114K
代理商: STL34NF06
1/6
PRELIMINARY DATA
November 2002
STL34NF06
N-CHANNEL 60V - 0.024
- 34A PowerFLAT
LOW GATE CHARGE STripFETII MOSFET
(1) Starting T
j
= 25°C, I
D
= 17A, V
DD
= 42V
TYPICAL R
DS
(on) = 0.024
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “STripFET” technolo-
gy. The resulting transistor shows extremely low on-
resistance and minimal gate charge. The new Pow-
erFLAT package allow a significant reduction in
board space without compramising performance.
APPLICATIONS
DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC
EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C (*)
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(*) Current Limited by Wire Bonding is 20A
TYPE
V
DSS
R
DS(on)
I
D
STL34NF06
60 V
< 0.028
34 A
Parameter
Value
Unit
60
V
60
V
± 20
V
34
20
A
A
136
A
70
W
0.56
W/°C
250
mJ
–55 to 150
°C
PowerFLAT(5x5)
(Chip Scale Package)
INTERNAL SCHEMATIC DIAGRAM
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