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參數(shù)資料
| 型號： | STHS4257L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | IEEE 802.3af PoE Powered Device (PD) Interface Controller with Integrated Signature Resistor(集成識別電阻的IEEE802.3af PoE PD 接口控制器) |
| 中文描述： | IEEE 802.3af標準的PoE供電設(shè)備（PD）接口控制器，它集成簽名電阻（集成識別電阻的IEEE802.3af標準PoE電源接口控制器） |
| 文件頁數(shù)： | 12/18頁 |
| 文件大?。?/td> | 173K |
| 代理商： | STHS4257L |
Electrical parameters
STHS4257A, STHS4257A1, STHS4257L, STHS4257L1
12/18
3
Electrical parameters
Over the full operating temperature range, unless otherwise noted. Specifications common
for both STHS4257x (=STHS4257A, STHS4257L) and STHS4257x1 (=STHS4257A1,
STHS4257L1) product families unless otherwise noted.
Electrical parameters
Table 5.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
IN
Maximum Operating Voltage
Input/supply voltage - with respect
to GND pin
(1)
,
(2)
,
(3)
–57
V
Signature Range
–1.5
–9.5
V
Classification Range
–12.5
–21
V
UVLO Turn-On Voltage,
STHS4257x1
–34.8 –36.0 –37.2
V
UVLO Turn-On Voltage,
STHS4257x
–37.7 –39.2 –40.2
V
UVLO Turn-Off Voltage
–29.3 –30.5 –31.5
V
I
IN ON
Supply Current when on
V
IN
= –48V, pins 5, 6, 7 floating
V
IN
= –17.5V, pins 2, 7 floating,
V
OUT
tied to GND
(4)
10mA < I
CLASS
< 40mA,
–12.5V
≤
V
IN
≤
–21V
(5)
–1.5V
≤
V
IN
≤
–9.5V, V
OUT
tied to
GND, IEEE 802.3af 2-point
measurement
(2)
,
(6)
0.33
0.5
mA
I
IN CLASS
Supply Current During
Classification
0.12
0.25
0.38
mA
Δ
I
CLASS
Current Accuracy During
Classification
±3.5
%
R
SIGNATURE
Signature Resistance
23.25
26.00
k
Ω
R
INVALID
Invalid Signature Resistance
–1.5V
≤
V
IN
≤
–9.5V, SIGDISA and
V
OUT
tied to GND, IEEE 802.3af
2-point measurement
(2)
,
(6)
,
(7)
9
11.8
k
Ω
V
IH
Signature Disable High Level
Input Voltage
With respect to V
IN
, high level
invalidates signature
(7)
3
57
V
V
IL
Signature Disable Low Level
Input Voltage
With respect to V
IN
, low level
enables signature
(7)
0.45
V
R
INPUT
Signature Disable Input
Resistance
With respect to V
IN
100
k
Ω
V
PG OUT
Power Good Output Low Voltage I
PG
= 1mA, V
IN
= –48V, PWRGD
referenced to V
IN
V
IN
= –48V, voltage between V
IN
and V
OUT
, V
OUT
rising
V
PWRGD
- V
IN
= 57V, PWRGD
MOSFET off, V
PWRGD
= V
GND
(9)
I = 350mA, V
IN
= –48V, measured
from V
IN
to V
OUT
V
IN
= 0V, power MOSFET off,
V
OUT
= 57V
(10)
V
IN
= –48V, V
OUT
= –43V
(11)
,
(12)
0°C
≤
T
A
≤
70°C
–40°C
≤
T
A
≤
85°C
0.5
V
V
PG TH RISE (8)
Power Good Trip Point, power
good signal going inactive
2.7
3.0
3.3
V
I
PG LEAK
Power Good Leakage Current
1
μA
R
ON
On-Resistance
0.72
1.0
Ω
I
OUT LEAK
V
OUT
Pin Leakage Current
1
μA
I
LIMIT HIGH
Input Current Limit, High Level,
STHS4257x1
(normal operation mode)
340
375
400
mA
330
375
400
mA
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