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參數(shù)資料
| 型號(hào)： | STH6N100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 10/10頁(yè) |
| 文件大小： | 202K |
| 代理商： | STH6N100 |
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license is granted by implication or otherwise under any patentor patentrights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication aresubject to change withoutnotice. Thispublication supersedes and replacesall information previously supplied.
SGS-THOMSONMicroelectronics products are notauthorized for use ascriticalcomponents in lifesupport devices or systems withoutexpress
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STH6N100/FI
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| STH6N100FI | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STH6N95K5-2 | 功能描述:MOSFET N-CH 950V 6A 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:剪切帶（CT） 零件狀態(tài):有效 FET 類(lèi)型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:950V 電流 - 連續(xù)漏極（Id）（25°C 時(shí)）:6A（Tc） 不同?Id，Vgs 時(shí)的?Rds On（最大值）:1.25 歐姆 @ 3A，10V 不同 Id 時(shí)的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時(shí)的柵極電荷（Qg）:13nC @ 10V 不同 Vds 時(shí)的輸入電容（Ciss）:450pF @ 100V 功率 - 最大值:110W 工作溫度:-55°C ~ 150°C（TJ） 安裝類(lèi)型:表面貼裝 封裝/外殼:TO-263-3，D2Pak（2 引線 + 凸片）變型 供應(yīng)商器件封裝:H2Pak-2 標(biāo)準(zhǔn)包裝:1 |
| STH6NA80 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.8A I(D) | TO-218 |
| STH6NA80FI | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR |
| STH75N06 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-218 |
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