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參數(shù)資料
| 型號： | STGD7NC60HT4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT |
| 中文描述： | N溝道第14A - 600V的TO-220/DPAK IGBT的非常快PowerMESH |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 367K |
| 代理商： | STGD7NC60HT4 |
STGP7NC60H - STGD7NC60H
12/12
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| STGP20NB37LZ | N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT |
| STGP20NC60V | N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT |
| STGW20NC60V | N-CHANNEL 30A - 600V - TO-220/TO-247 Very Fast PowerMESH IGBT |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGD8NC60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT |
| STGD8NC60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 8 A - short circuit rugged IGBT |
| STGD8NC60KDT4 | 功能描述:IGBT 晶體管 N Ch 55V 6.5mohm 80A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD8NC60KT4 | 功能描述:IGBT 晶體管 N Ch 55V 6.5mohm 80A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGDL6NC60D | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 6 A hyper fast IGBT |
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