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參數(shù)資料
| 型號(hào)： | SST49LF008C-33-4C-NHE |
| 元件分類： | PROM |
| 英文描述： | 1M X 8 FLASH 3V PROM, 11 ns, PQCC32 |
| 封裝： | ROHS COMPLIANT, PLASTIC, MS-016AE, LCC-32 |
| 文件頁數(shù)： | 12/36頁 |
| 文件大小： | 509K |
| 代理商： | SST49LF008C-33-4C-NHE |
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Advance Information
4 Mbit / 8 Mbit LPC Serial Flash
SST49LF004C / SST49LF008C
200 Silicon Storage Technology, Inc.
S71292-00-000
1/06
scheme. The PDA can be also used to store system con-
figuration
data
(EEPROM
replacement).
The
SST49LF00xC also provides general purpose inputs (GPI)
for system design flexibility.
The SST49LF00xC flash memory device is manufactured
with SST’s proprietary, high-performance SuperFlash tech-
nology. The split-gate cell design and thick-oxide tunneling
injector attain greater reliability and manufacturability com-
pared with alternative technology approaches. The
SST49LF00xC device significantly improves performance
and reliability, while lowering power consumption. The
SST49LF00xC device writes (Program or Erase) in-system
with a single 3.0-3.6V power supply. It uses less energy
during Erase and Program than alternative flash memory
technologies.
The total energy consumed is a function of the applied volt-
age, current and time of application. Since for any given
voltage range, the SuperFlash technology uses less cur-
rent to program and has a shorter erase time, the total
energy consumed during any Erase or Program operation
is less than alternative flash memory technologies.
The SuperFlash technology provides fixed Erase and Pro-
gram time, independent of the number of Erase/Program
cycles that have performed. Therefore the system software
or hardware does not have to be calibrated or correlated to
the cumulative number of erase cycles as is necessary with
alternative flash memory technologies, whose Erase and
Program time increase with accumulated Erase/Program
cycles.
To
protect
against
inadvertent
write,
the
SST49LF00xC device has on-chip hardware and software
write protection schemes. It is offered with a typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST49LF00xC product provides a maximum program
time of 10 s per byte with a single-byte Program opera-
tion; effectively 5 s per byte with a dual-byte Program
operation and 2.5 s per byte with a quad-byte Program
operation. End-of-Write can be detected by the RY/BY# pin
output in AAI mode and by reading the software status reg-
ister during an in-system Program or Erase operation.
The SST49LF00xC is offered in 32-PLCC, and 32-TSOP
packages. In addition, the SST49LF00xC devices are
offered in lead-free (non-Pb) package options to address
the growing need for non-Pb solutions in electronic compo-
nents. Non-Pb package versions can be obtained by order-
ing products with a package code suffix of “E” as the
environmental attribute in the product part number. See
descriptions.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST49LF008C-33-4C-WHE | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:4 Mbit / 8 Mbit LPC Serial Flash |
| SST49LF016C | 制造商:SST 制造商全稱:Silicon Storage Technology, Inc 功能描述:16 Mbit LPC Serial Flash |
| SST49LF016C-33-4C-EIE | 功能描述:閃存 16M (2Mx8) 33MHz 3.0-3.6V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST49LF016C-33-4C-EIE-T | 功能描述:閃存 3.0 to 3.6V 16Mbit LPC Firmware 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST49LF016C-33-4C-NHE | 功能描述:閃存 16M (2Mx8) 33MHz 3.0-3.6V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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