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參數(shù)資料
| 型號： | SST26WF032-80-4I-QAE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 6 X 5 MM, ROHS COMPLIANT, WSON-8 |
| 文件頁數(shù)： | 3/36頁 |
| 文件大?。?/td> | 1339K |
| 代理商： | SST26WF032-80-4I-QAE |
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2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
11
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
Instructions
Instructions are used to read, write (erase and program), and configure the SST26WF032. The
instruction bus cycles are two nibbles each for commands (Op Code), data, and addresses. Prior to
executing any write instructions, the Write-Enable (WREN) instruction must be executed. The com-
plete list of the instructions is provided in Table 3.
All instructions are synchronized off a high to low transition of CE#. Inputs are accepted on the rising
edge of SCK starting with the most significant nibble. CE# must be driven low before an instruction is
entered and must be driven high after the last nibble of the instruction has been input (except for read
instructions). Any low-to-high transition on CE# before receiving the last nibble of an instruction bus
cycle, will terminate the instruction being entered and return the device to the standby mode.
Table 3: Device Operation Instructions for SST26WF032
Instruction
Description
Command
Cycle1
Address
Cycle(s)2
Dummy
Cycle(s)
Data
Cycle(s)
Maximum
Frequency
NOP
No Operation
00H
0
80 MHz
RSTEN
Reset Enable
66H
0
RST3
Reset Memory
99H
0
EQIO
Enable Quad I/O
38H
0
RSTQIO4
Reset Quad I/O
FFH
0
Read5
Read Memory
03H
3
0
1 to
∞
25 MHz
High-Speed Read5 Read Memory at
Higher Speed
0BH
3
2
1 to
∞
80 MHz
Set Burst6
Set Burst Length
C0H
0
1
Read Burst
nB Burst with Wrap
0CH
3
2
n to
∞
JEDEC-ID 5,7
JEDEC-ID Read
9FH
0
3 to
∞
Quad J-ID7
Quad I/O J-ID Read
AFH
0
3 to
∞
Sector Erase8
Erase 4 KBytes of
Memory Array
20H
3
0
Block Erase9
Erase 64, 32 or 8
KBytes of Memory
Array
D8H
3
0
Chip Erase
Erase Full Array
C7H
0
Page Program
Program 1 to 256
Data Bytes
02H
3
0
1 to 256
Write Suspend
Suspends Program/
Erase
B0H
0
Write Resume
Resumes Program/
Erase
30H
0
Read SID
Read Security ID
88H
1
2
1 to 32
Program SID10
Program User Secu-
rity ID area
A5H
1
0
1 to 24
Lockout SID10
Lockout Security ID
Programming
85H
0
RDSR11
Read Status Regis-
ter
05H
0
1 to
∞
WREN
Write Enable
06H
0
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SST26WF032-80-4I-QAE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST26WF032-80-4I-S2AE | 功能描述:閃存 1.65 to 1.95V 32Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST26WF032-80-4I-S2AE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST270 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST270-E3 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
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