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參數(shù)資料
| 型號： | SST26WF032-80-4I-QAE |
| 廠商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分類： | PROM |
| 英文描述： | 32M X 1 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 6 X 5 MM, ROHS COMPLIANT, WSON-8 |
| 文件頁數(shù)： | 13/36頁 |
| 文件大?。?/td> | 1339K |
| 代理商： | SST26WF032-80-4I-QAE |
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2010 Silicon Storage Technology, Inc.
S71409-01-000
01/10
20
1.8V Serial Quad I/O (SQI) Flash Memory
SST26WF032
Advance Information
Page-Program
The Page-Program instruction programs up to 256 Bytes of data in the memory. The data for the
selected page address must be in the erased state (FFH) before initiating the Page-Program operation.
A Page-Program applied to a protected memory area will be ignored. Prior to the program operation,
execute the WREN instruction.
To execute a Page-Program operation, the host drives CE# low then sends the Page Program com-
mand cycle (02H), three address cycles followed by the data to be programmed, then drives CE# high.
The programmed data must be between 1 to 256 Bytes and in whole Byte increments; sending an odd
number of nibbles will cause the last nibble to be ignored. Each cycle is two nibbles (clocks) long, most
significant bit first. Poll the BUSY bit in the Status register or wait TPP for the completion of the internal,
self-timed, Page-Program operation. See Figure 18 for the Page-Program sequence.
When executing Page-Program, the memory range for the SST26WF032 is divided into 256 Byte page
boundaries. The device handles shifting of more than 256 Bytes of data by maintaining the last 256
Bytes of data as the correct data to be programmed. If the target address for the Page-Program
instruction is not the beginning of the page boundary (A7:A0 are not all zero), and the number of data
input exceeds or overlaps the end of the address of the page boundary, the excess data inputs wrap
around and will be programmed at the start of that target page.
Figure 18:Page-Program Sequence
Write-Suspend and Write-Resume
Write-Suspend allows the interruption of Sector-Erase, Block-Erase or Page-Program operations in
order to erase, program, or read data in another portion of memory. The original operation can be con-
tinued with the Write-Resume command.
Only one write operation can be suspended at a time; if an operation is already suspended, the device
will ignore the Write-Suspend command. Write-Suspend during Chip-Erase is ignored; Chip-Erase is
not a valid command while a write is suspended.
Write-Suspend During Sector-Erase or Block-Erase
Issuing a Write-Suspend instruction during Sector-Erase or Block-Erase allows the host to program or
read any sector that was not being erased. The device will ignore any programming commands point-
ing to the suspended sector(s). Any attempt to read from the suspended sector(s) will output unknown
data because the Sector- or Block-Erase will be incomplete.
1409 F10.0
MODE 3
0
SCK
SIO(3:0)
CE#
C1 C0
MODE 0
2
A5 A4
MSN LSN
4
A3 A2
6
A1 A0
8
H0 L0
10
H1 L1
12
H2 L2
542
HN LN
Data Byte 0 Data Byte 1 Data Byte 2
Data Byte 255
Note: MSN = Most Significant Nibble, LSN = Least Significant Nibble
C[1:0] = 02H
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SST26WF032-80-4I-QAE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST26WF032-80-4I-S2AE | 功能描述:閃存 1.65 to 1.95V 32Mbit Serial Quad I/O Flsh RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| SST26WF032-80-4I-S2AE-T | 制造商:Microchip Technology Inc 功能描述:1.65 TO 1.95V 32MBIT SERIAL QUAD I/O FLASH - Tape and Reel |
| SST270 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| SST270-E3 | 功能描述:JFET 45V 2mA RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
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