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參數(shù)資料
| 型號： | SM6HT43A |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | SM6HT43A |
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Characteristics
SM6HT
2/8
1
Characteristics
Table 1.
Absolute maximum rating (Tamb = 25° C)
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (1)
1.
for a surge greater than the maximum values, the diode will fail in short circuit.
Tj initial = Tamb
600
W
P
Power dissipation on infinite heatsink
Tamb = 50° C
6
W
IFSM
Non repetitive surge peak forward
current for unidirectional types
tp = 10 ms
Tj initial = Tamb
75
A
Tstg / Tj
Storage and operating junction temperature range
-65 to 175
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
Table 2.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-l)
Junction to leads
20
°C/W
Rth(j-a)
Junction to ambient on printed circuit on recommended pad layout
100
°C/W
Table 3.
Electrical characteristics (Tamb = 25° C)
Symbol
Parameter
VRM
Stand-off voltage
VBR
Breakdown voltage
VCL
Clamping voltage
IRM
Leakage current
IPP
Peak pulse current
VF
Forward voltage drop
VF < 3.5 V @ IF = 50 A
(pulse test: tp ≤ 500 s)
IZ
Continuous regulation current
VCL
VRM
VF
V
IRM
IPP
IF
I
VBR
Types
Marking
IRM @ VBR
VBR @ IR
(1)
VCL @ IPP αT
(2)
IZ @
Tamb=25° C Tamb=150° C
10/1000 s
Tamb=50°C
max
min nom max
max
A
V
mA
V
A
10-4/°C
mA
SM6HT24A
EMB
25
20.5 22.8
24
25.2
1
33.2 18.0
9.4
50
SM6HT27A
EPB
23.1 25.7
27
28.4
37.5 16.0
9.6
44
SM6HT30A
ERB
25.6 28.5
30
31.5
41.5 14.5
9.7
40
SM6HT36A
EVB
30.8 34.2
36
37.8
49.9 12.0
9.9
33
SM6HT39A
EXB
33.3 37.1
39
41.0
53.9 11.1
10.0
20
SM6HT43A
EYB
36.8 40.9
43
45.2
59.3 10.1
10.1
28
1.
Pulse test: tp < 50 ms
2.
ΔVBR = αT x (Tamb - 25) x VBR (25° C)
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