參數(shù)資料
型號(hào): SM532013011X4S6
元件分類: DRAM
英文描述: 1M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72
封裝: SIMM-72
文件頁數(shù): 24/24頁
文件大小: 177K
代理商: SM532013011X4S6
SM5320130UUXUUU
November 19, 1996
C
orporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA Tel:(510) 623-1231 Fax:(510) 623-1434 E-mail: info@smartm.com
Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK Tel: + 44-1908 234030 Fax: + 44-1908-234191
Asia/Pacic: Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia Tel: + 61-9-361-9705 Fax: + 61-9-361-9715
9
SMART
Modular Technologies
(VCC = 3.3V±10%/5.0V±10%, VSS = 0V, TA = 0 to +70 °C)
Parameter
Symbol
60ns
70ns
80ns
Unit Notes
Min
Max
Min
Max
Min
Max
Read Cycle
Access time from column address
tAA
-
30
-
35
-
40
ns
3, 10
Access time from CAS#
tCAC
-
17
-
20
-
20
ns
3, 4, 5
Output buffer turn-off time to CAS#
tCEZ
3153
20
3
20
ns
6
Access time from RAS#
tRAC
-
60
-
70
-
80
ns
3, 4
Column address to RAS# lead time
tRAL
30
-
35
-
40
-
ns
Read command hold time referenced to CAS#
tRCH
0-0
-
0
-
ns
8
Read command set-up time
tRCS
0-0
-
0
-
ns
Output buffer turn-off delay to RAS#
tREZ
3153
20
3
20
ns
Read command hold time referenced to RAS#
tRRH
0-0
-
0
-
ns
8
Write Cycle
Write command to CAS# lead time
tCWL
10
-
15
-
20
-
ns
Data-in hold time
tDH
10-15
-
15
-
ns
9
Data-in hold time to RAS#
tDHR
45
-
55
-
60
-
ns
13
Data-in set-up time
tDS
0-0
-
0
-
ns
9
Write command to RAS# lead time
tRWL
15
-
15
-
20
-
ns
Write command hold time
tWCH
10
-
15
-
15
-
ns
Write command hold time referenced to RAS#
tWCR
45
-
50
-
55
-
ns
13
Write command set-up time
tWCS
0-0
-
0
-
ns
7
Write command pulse width
tWP
10
-
15
-
15
-
ns
Hyper Page Mode Cycle
Access time from CAS# precharge
tACP
-
35
-
40
-
45
ns
3, 11
CAS# precharge time
tCP
10
-
10
-
10
-
ns
Output data hold time
tDOH
5-5
-
5
-
ns
Hyper page mode cycle time
tHPC
24
-
29
-
34
-
ns
RAS# pulse width
tRASP
60
200000
70
200000
80
200000
ns
12
RAS# hold time from CAS# precharge
tRHCP
35
-
40
-
45
-
ns
Refresh Cycle
CAS# hold time (CBR refresh)
tCHR
10-10
-
10
-
ns
1
CAS# set-up time (CBR refresh)
tCSR
10-10
-
10
-
ns
1
Refresh period
tREF
1K refresh
-
16
-
16
-
16
ms
4K refresh
-
64
-
64
-
64
ms
RAS# precharge to CAS# hold time
tRPC
5-5
-
5
-
ns
AC Characteristics (cont’d)
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