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參數(shù)資料
| 型號(hào)： | SLVU2.8-4.TB |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 400 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE, MS-012AA |
| 封裝： | SOP-8 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 200K |
| 代理商： | SLVU2.8-4.TB |
6
2008 Semtech Corp.
www.semtech.com
PROTECTION PRODUCTS
SLVU2.8-4
Applications Information (continued)
IPP
I
SB
IPT
I
R
VRWM
V
PT VC
VBRR
I
BRR
SB
EPD TVS IV Characteristic Curve
EPD TVS Characteristics
The SLVU2.8-4 is constructed using Semtech’s propri-
etary EPD technology. The structure of the EPD TVS is
vastly different from the traditional pn-junction devices.
At voltages below 5V, high leakage current and junction
capacitance render conventional avalanche technology
impractical for most applications. However, by utilizing
the EPD technology, the SLVU2.8-4 can effectively
operate at 2.8V while maintaining excellent electrical
characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. The EPD mecha-
nism is achieved by engineering the center region of
the device such that the reverse biased junction does
not avalanche, but will “punch-through” to a conduct-
ing state. This structure results in a device with supe-
rior dc electrical parameters at low voltages while
maintaining the capability to absorb high transient
currents.
The IV characteristic curve of the EPD device is shown
in Figure 1. The device represents a high impedance
to the circuit up to the working voltage (V
RWM). During a
transient event, the device will begin to conduct as it is
biased in the reverse direction. When the punch-
through voltage (V
PT) is exceeded, the device enters a
low impedance state, diverting the transient current
away from the protected circuit. When the device is
conducting current, it will exhibit a slight “snap-back” or
negative resistance characteristic due to its structure.
This must be considered when connecting the device
to a power supply rail. To return to a non-conducting
state, the current through the device must fall below
the snap-back current (approximately < 50mA).
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