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參數(shù)資料
| 型號(hào)： | NUP2301MW6T1D |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Low Capacitance Diode Array for ESD Protection in Two Data Lines |
| 中文描述： | 低電容二極管陣列兩種數(shù)據(jù)線的ESD保護(hù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 89K |
| 代理商： | NUP2301MW6T1D |
Semiconductor Components Industries, LLC, 2005
January, 2005
Rev. 2
1
Publication Order Number:
NUP2301MW6T1/D
NUP2301MW6T1
Low Capacitance Diode
Array for ESD Protection in
Two Data Lines
NUP2301MW6T1 is a MicroIntegration
device designed to
provide protection for sensitive components from possible harmful
electrical transients; for example, ESD (electrostatic discharge).
Features
Low Capacitance (2.0 pf Maximum Between I/O Lines)
Single Package Integration Design
Provides ESD Protection for JEDEC Standards JESD22
Machine Model = Class C
Human Body Model = Class 3B
Protection for IEC61000
4
2 (Level 4)
8.0 kV (Contact)
15 kV (Air)
Ensures Data Line Speed and Integrity
Fewer Components and Less Board Space
Direct the Transient to Either Positive Side or to the Ground
Pb
Free Package is Available
Applications
T1/E1 Secondary IC Protection
T3/E3 Secondary IC Protection
HDSL, IDSL Secondary IC Protection
Video Line Protection
Microcontroller Input Protection
Base Stations
I
2
C Bus Protection
MAXIMUM RATINGS
(Each Diode)
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
I
F
70
Vdc
Forward Current
200
mAdc
Peak Forward Surge Current
I
FM(surge)
V
RRM
I
F(AV)
500
mAdc
Repetitive Peak Reverse Voltage
70
V
Average Rectified Forward
Current (Note 1)
(Averaged over any 20 ms Period)
715
mA
Repetitive Peak Forward Current
I
FRM
I
FSM
450
mA
Non
Repetitive Peak Forward Current
t = 1.0 s
t = 1.0 ms
t = 1.0 S
2.0
1.0
0.5
A
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. FR
5 = 1.0
0.75
0.062 in.
Device
Package
Shipping
ORDERING INFORMATION
NUP2301MW6T1
SC
88
3000/Tape & Reel
MARKING DIAGRAM
SC
88
CASE 419B
STYLE 23
68
d
68 = Specific Device Code
d
= Date Code
1
6
N/C
5
V
N
I/O
V
P
2
5
3
4
6
4
I/O
N/C
1
2
3
PIN CONFIGURATION
AND SCHEMATIC
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
NUP2301MW6T1G
SC
88
(Pb
Free)
3000/Tape & Reel
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PDF描述 |
|---|---|
| NUP2301MW6T1 | Low Capacitance Diode Array for ESD Protection in Two Data Lines(在兩條數(shù)據(jù)線中用于進(jìn)行ESD保護(hù)的低電容二極管陣列) |
| NUP4004M5 | 5−Pin Bi−Directional Quad TVS Array |
| NUP4004M5T1G | 5−Pin Bi−Directional Quad TVS Array |
| NUP4060AXV6 | 4-Line Transient Voltage Suppressor Array(4線瞬變電壓抑制器陣列) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NUP2301MW6T1G | 功能描述:整流器 Low Cap. for ESD Protection in 2 Line RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| NUP3112UPMU | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Quad Transient Voltage Suppressor Array |
| NUP3112UPMUTAG | 功能描述:TVS二極管陣列 LOW CAP TVS ARRAY 3 LINE RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
| NUP3115UPMU | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Transient Voltage Suppressors |
| NUP3115UPMUTAG | 功能描述:TVS二極管陣列 LOW CAP TVS ARRAY RoHS:否 制造商:Littelfuse 極性: 通道:4 Channels 擊穿電壓: 鉗位電壓:11.5 V 工作電壓:2.5 V 峰值浪涌電流:20 A 安裝風(fēng)格:SMD/SMT 端接類型:SMD/SMT 系列: 最小工作溫度:- 40 C 最大工作溫度:+ 85 C |
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