參數(shù)資料
型號(hào)： S29PL127N65GFI002
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述： 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
封裝： 8 X 11.60 MM, LEAD FREE, FBGA-64
文件頁數(shù)： 7/85頁
文件大?。?/td> 940K
代理商： S29PL127N65GFI002
November 23, 2005 S29PL-N_00_A4
S29PL-N MirrorBit Flash Family
5
P r e l i m i n a r y
Figures
Figure 2.1
Figure 4.1
Figure 4.2
Figure 4.3
Figure 4.4
Figure 4.5
Figure 4.6
Figure 4.7
Figure 4.8
Figure 7.1
Figure 7.2
Figure 7.3
Figure 7.4
Figure 7.5
Figure 7.6
Figure 8.1
Figure 8.2
Figure 11.1
Figure 11.2
Figure 11.3
Figure 11.4
Figure 11.5
Figure 11.6
Figure 11.7
Figure 11.8
Figure 11.9
Figure 11.10
Figure 11.11
Figure 11.12
Figure 11.13
Figure 11.14
Figure 11.15
Logic Symbols – PL256N, PL129N, and PL127N .........................................................7
Connection Diagram – 84-ball Fine-Pitch Ball Grid Array (S29PL256N)..........................9
Physical Dimensions – 84-ball Fine-Pitch Ball Grid Array (S29PL256N) ........................ 10
Connection Diagram – 64-Ball Fine-Pitch Ball Grid Array (S29PL127N) ....................... 11
Connection Diagram – 64-Ball Fine-Pitch Ball Grid Array (S29PL129N) ....................... 12
Physical Dimensions – 64-Ball Fine-Pitch Ball Grid Array (S29PL-N) ...........................................13
Connection Diagram – 64-Ball Fine-Pitch Ball Grid Array (S29PL127N, S29PL256N) ............14
Physical Dimensions – 64-Ball Fortified Ball Grid Array (S29PL-N)..............................................15
MCP Look-Ahead Diagram .................................................................................... 16
Single Word Program Operation ............................................................................ 27
Write Buffer Programming Operation ..................................................................... 30
Sector Erase Operation ........................................................................................ 32
Write Operation Status Flowchart .......................................................................... 39
Simultaneous Operation Block Diagram for S29PL256N and S29PL127N ..................... 43
Simultaneous Operation Block Diagram for S29PL129N ............................................ 44
Advanced Sector Protection/Unprotection ............................................................... 48
Lock Register Program Algorithm........................................................................... 52
Maximum Negative Overshoot Waveform ............................................................... 59
Maximum Positive Overshoot Waveform................................................................. 59
Test Setup ......................................................................................................... 60
Input Waveforms and Measurement Levels............................................................. 61
V
CC
Power-Up Diagram ........................................................................................ 61
Read Operation Timings ....................................................................................... 64
Page Read Operation Timings ............................................................................... 65
Reset Timings..................................................................................................... 65
Program Operation Timings .................................................................................. 67
Accelerated Program Timing Diagram .................................................................... 67
Chip/Sector Erase Operation Timings ..................................................................... 68
Back-to-back Read/Write Cycle Timings ................................................................. 68
Data# Polling Timings (During Embedded Algorithms).............................................. 69
Toggle Bit Timings (During Embedded Algorithms)................................................... 69
DQ2 vs. DQ6 ...................................................................................................... 70
相關(guān)PDF資料
PDF描述
S29PL127N65GFI003 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFIW00 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFIW02 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFIW03 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFW000 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29PL127N65GFI003 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFIW00 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFIW02 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFIW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
S29PL127N65GFW000 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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