參數(shù)資料
型號: S29PL127N65GFI002
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
中文描述: 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
封裝: 8 X 11.60 MM, LEAD FREE, FBGA-64
文件頁數(shù): 60/85頁
文件大?。?/td> 940K
代理商: S29PL127N65GFI002
58
S29PL-N MirrorBit Flash Family
S29PL-N_00_A4 November 23, 2005
P r e l i m i n a r y
Note:
Base = Base Address.
/* Example: SecSi Sector Entry Command */
*((UINT16 *)base_addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)base_addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)base_addr + 0x555) = 0x0088; /* write Secsi Sector Entry Cmd */
Note:
Base = Base Address.
/* Once in the SecSi Sector mode, you program */
/* words using the programming algorithm. */
Note:
Base = Base Address.
/* Example: SecSi Sector Exit Command */
*((UINT16 *)base_addr + 0x555) = 0x00AA; /* write unlock cycle 1 */
*((UINT16 *)base_addr + 0x2AA) = 0x0055; /* write unlock cycle 2 */
*((UINT16 *)base_addr + 0x555) = 0x0090; /* write SecSi Sector Exit cycle 3 */
*((UINT16 *)base_addr + 0x000) = 0x0000; /* write SecSi Sector Exit cycle 4 */
Table 10.2 Secured Silicon Sector Entry
(LLD Function = lld_ SecSiSectorEntryCmd)
Cycle
Operation
Word Address
Data
Unlock Cycle 1
Write
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 2AAh
0055h
Entry Cycle
Write
Base + 555h
0088h
Table 10.3 Secured Silicon Sector Program
(LLD Function = lld_ ProgramCmd)
Cycle
Operation
Word Address
Data
Unlock Cycle 1
Write
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 2AAh
0055h
Program Setup
Write
Base + 555h
00A0h
Program
Write
Word Address
Data Word
Table 10.4 Secured Silicon Sector Exit
(LLD Function = lld_ SecSiSectorExitCmd)
Cycle
Operation
Word Address
Data
Unlock Cycle 1
Write
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 2AAh
0055h
Exit Cycle
Write
Base + 555h
0090h
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S29PL127N65GFIW03 制造商:SPANSION 制造商全稱:SPANSION 功能描述:256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
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