參數(shù)資料
型號(hào)： S29GL128P10TFIV10
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù)： 48/80頁(yè)
文件大?。?/td> 2706K
代理商： S29GL128P10TFIV10
52
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Note
Base = Base Address.
/* Example: Program Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x00A0; /* write program setup command */
*( (UINT16 *)pa ) = data; /* write data to be programmed */
/* Poll for program completion */
Note
Base = Base Address.
/* Example: SecSi Sector Exit Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x0090;
/* write SecSi Sector Exit cycle 3 */
*( (UINT16 *)base_addr + 0x000 ) = 0x0000;
/* write SecSi Sector Exit cycle 4 */
Table 10.3 Secured Silicon Sector Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Program Setup
Write
Base + AAAh
Base + 555h
00A0h
Program
Write
Word Address
Data Word
Table 10.4 Secured Silicon Sector Exit
(LLD Function = lld_SecSiSectorExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Exit Cycle 3
Write
Base + AAAh
Base + 555h
0090h
Exit Cycle 4
Write
Base + XXXh
0000h
相關(guān)PDF資料
PDF描述
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