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參數(shù)資料
| 型號(hào)： | S29GL128P10TFIR10 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 8/80頁(yè) |
| 文件大小： | 2706K |
| 代理商： | S29GL128P10TFIR10 |
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16
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
4.4
TS056—56-Pin Standard Thin Small Outline Package (TSOP)
Figure 4.4 56-Pin Thin Small Outline Package (TSOP), 14 x 20 mm
NOTES:
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982.)
2
PIN 1 IDENTIFIER FOR STANDARD PIN OUT (DIE UP).
3
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS
DEFINED AS THE PLANE OF CONTACT THAT IS MADE WHEN THE PACKAGE
LEADS ARE ALLOWED TO REST FREELY ON A FLAT HORIZONTAL SURFACE.
4
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE
MOLD PROTUSION IS 0.15 mm PER SIDE.
5
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE
DAMBAR PROTUSION SHALL BE 0.08 mm TOTAL IN EXCESS OF b
DIMENSION AT MAX MATERIAL CONDITION. MINIMUM SPACE BETWEEN
PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 mm.
6
THESE DIMESIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN
0.10 mm AND 0.25 mm FROM THE LEAD TIP.
7
LEAD COPLANARITY SHALL BE WITHIN 0.10 mm AS MEASURED FROM THE
SEATING PLANE.
8
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
3160\38.10A
MO-142 (B) EC
TS 56
NOM.
---
1.00
1.20
0.15
1.05
MAX.
---
MIN.
0.95
0.20
0.23
0.17
0.22
0.27
0.17
---
0.16
0.10
---
0.21
0.10
20.00
20.20
19.80
14.00
14.10
13.90
0.60
0.70
0.50
-8
0
---
0.20
0.08
56
18.40
18.50
18.30
0.05
0.50 BASIC
E
R
b1
JEDEC
PACKAGE
SYMBOL
A
A2
A1
D1
D
c1
c
b
e
L
N
O
相關(guān)PDF資料 |
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| S29GL128P10TFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL032N90BFI32 | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| S2A | SURFACE MOUNT RECTIFIER |
| S2B | SURFACE MOUNT RECTIFIER |
| S2C1R-1-5-H | 4000 MHz - 8000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.7 dB INSERTION LOSS |
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參數(shù)描述 |
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| S29GL128P11FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FAI010A | 制造商:Spansion 功能描述: |
| S29GL128P11FAI020 | 功能描述:閃存 128MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL128P11FAIV10 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
| S29GL128P11FAIV20 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 110NS 64BGA - Trays |
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