參數(shù)資料
型號(hào)： S29GL128P10TFIR10
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 27/80頁
文件大?。?/td> 2706K
代理商： S29GL128P10TFIR10
November 20, 2009 S29GL-P_00_A12
S29GL-P MirrorBit Flash Family
33
Data
She e t
7.7.5
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for erasure. The sector addresses are “don't-cares” when
writing this command. This command is valid only during the sector erase operation, including the minimum
tSEA time-out period during the sector erase command sequence. The Erase Suspend command is ignored if
written during the chip erase operation.
When the Erase Suspend command is written during the sector erase operation, the device requires a
maximum of 20 s (5 s typical) to suspend the erase operation. However, when the Erase Suspend
command is written during the sector erase time-out, the device immediately terminates the time-out period
and suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-suspend-read mode. The system
can read data from or program data to any sector not selected for erasure. (The device “erase suspends” all
sectors selected for erasure.) Reading at any address within erase-suspended sectors produces status
information on DQ7-DQ0. The system can use DQ7, or DQ6, and DQ2 together, to determine if a sector is
actively erasing or is erase-suspended. Refer to Table 7.35 for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the erase-suspend-read
mode. The system can determine the status of the program operation using write operation status bits, just as
in the standard program operation.
In the erase-suspend-read mode, the system can also issue the Autoselect command sequence. Refer to
To resume the sector erase operation, the system must write the Erase Resume command. The address of
the erase-suspended sector is a “don't-care” when writing this command. Further writes of the Resume
command are ignored. Another Erase Suspend command can be written after the chip has resumed erasing.
Software Functions and Sample Code
The following is a C source code example of using the erase suspend function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase suspend command */
*( (UINT16 *)base_addr ) = 0x00B0;
/* write suspend command
*/
The following is a C source code example of using the erase resume function. Refer to the Spansion Low
Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Erase resume command */
*( (UINT16 *)sector_addr ) = 0x0030;
/* write resume command
*/
/* The flash needs adequate time in the resume state */
Table 7.10 Erase Suspend
(LLD Function = lld_EraseSuspendCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Base + XXXh
00B0h
Table 7.11 Erase Resume
(LLD Function = lld_EraseResumeCmd)
Cycle
Operation
Byte Address
Word Address
Data
1
Write
Sector Address
0030h
相關(guān)PDF資料
PDF描述
S29GL128P10TFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL032N90BFI32 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
S2A SURFACE MOUNT RECTIFIER
S2B SURFACE MOUNT RECTIFIER
S2C1R-1-5-H 4000 MHz - 8000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.7 dB INSERTION LOSS
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