參數(shù)資料
型號(hào)： S29GL128P10TFIR10
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù)： 21/80頁(yè)
文件大?。?/td> 2706K
代理商： S29GL128P10TFIR10
28
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Software Functions and Sample Code
Notes
1. Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to
37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Write Buffer Programming Command
*/
/* NOTES: Write buffer programming limited to 16 words. */
/*
All addresses to be written to the flash in
*/
/*
one operation must be within the same flash
*/
/*
page. A flash page begins at addresses
*/
/*
evenly divisible by 0x20.
*/
UINT16 *src = source_of_data;
/* address of source data
*/
UINT16 *dst = destination_of_data;
/* flash destination address
*/
UINT16 wc
= words_to_program -1;
/* word count (minus 1)
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)sector_address )
= 0x0025;
/* write write buffer load command */
*( (UINT16 *)sector_address )
= wc;
/* write word count (minus 1)
*/
for (i=0;i<=wc;i++)
{
*dst++ = *src++; /* ALL dst MUST BE in same Write Buffer */
}
*( (UINT16 *)sector_address )
= 0x0029;
/* write confirm command
*/
/* poll for completion */
/* Example: Write Buffer Abort Reset */
*( (UINT16 *)addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)addr + 0x555 ) = 0x00F0;
/* write buffer abort reset
*/
Table 7.7 Write Buffer Program
(LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Sector Address
0025h
4
Write Word Count
Write
Sector Address
Word Count (N–1)h
Number of words (N) loaded into the write buffer can be from 1 to 32 words (1 to 64 bytes).
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
相關(guān)PDF資料
PDF描述
S29GL128P10TFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL032N90BFI32 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
S2A SURFACE MOUNT RECTIFIER
S2B SURFACE MOUNT RECTIFIER
S2C1R-1-5-H 4000 MHz - 8000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.7 dB INSERTION LOSS
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