參數(shù)資料
型號: S29GL128P10TFI010
廠商: SPANSION LLC
元件分類: PROM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述: 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝: 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù): 76/80頁
文件大?。?/td> 2706K
代理商: S29GL128P10TFI010
78
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Revision A8 (November 28, 2007)
Ordering Information
New commercial operating temperature option
Operating Ranges
New operating temperature range
Revision A9 (February 15, 2008)
Electrical Specification
Modified Test Conditions
Erase and Programming Performance
Chip Program Time: removed comment
Sector Protection Command Definition,
x16 Table
Corrected Lock Register “Read” address
Advance Information on S29GL-R 65
nm MirrorBit Hardware Reset (RESET#)
and Power-up Sequence
Power-Up Sequence Timings Table: modified Note 2 - reduced timing from 500 s to 300 s
Revision A10 (March 19, 2008)
Global
Changed document status to Full Production.
DC Characteristics
Changed Max values for Input Load Current (ILI)
Sector Protection Command Definitions
(x16 & x8 tables)
Changed Lock Register Read command from “DATA” to “RD”
Revision A11 (June 11, 2008)
Ordering Information
Revised Commercial temperature range
Figure: Write Operation Status
Flowchart
Updated flowchart
Revision A12 (November 20, 2009)
Table Input/Output Descriptions
Removed RFU description
Figure 64-ball Fortified Ball Grid Array
Changed all RFU pins to NC pins
Figure 56-pin Standard TSOP (Top
View)
Changed all RFU pins to NC pins
Table Autoselect Exit
Changed cycle description to Auto Select Exit Command
Table Chip Erase
Changed address of last C source code command from 0x000h to 0x555h
Erase Suspend/Erase Resume
Changed first paragraph, second sentence to sector address is “don't care” for Erase Suspend
Changed sixth paragraph, second sentence to sector address is “don't care” for Erase Suspend
Tables
Program Suspend
Program Resume
Unlock Bypass Entry
Unlock Bypass Program
Unlock Bypass Reset
Added Byte Address to tables
Unlock Bypass
Third paragraph, first sentence added unlock bypass Sector Erase and unlock bypass Chip Erase
as valid commands
Changed paragraph, third sentence to sector address of exit command is “don't care”.
Writing Commands/Command
Sequence
Changed tables listed in fourth sentence to Table 6.1-6.4
WP#/ACC Method
Changed table listed in Note section to 11.2.
Secured Silicon Sector Entry/Exit
Command Sequence
Added source code for program under Table 10.3
Table Secured Silicon Sector Exit
Changed Byte and Word addresses of Exit Cycle to “XXXh”
Figure Test Setup
Changed test setup to show only a load of CL
Table Test Specification
Removed Output Load Test Condition
Table S29GL-P Erase and Program
Operations
Removed tGHWL
Table S29GL-P Alternate CE#
Controlled Erase and Program
Operations
Changed description of tGHEL to (OE# High to CE# Low)
Change Note 2 to “DC Characteristics”
Section
Description
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