參數(shù)資料
型號(hào)： S29GL128P10TFI010
廠商： SPANSION LLC
元件分類(lèi)： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù)： 72/80頁(yè)
文件大?。?/td> 2706K
代理商： S29GL128P10TFI010
74
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Table 12.6 System Interface String
Addresses (x16)
Addresses (x8)
Data
Description
1Bh
36h
0027h
VCC Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Ch
38h
0036h
VCC Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0006h
Typical timeout per single byte/word write 2
N s
20h
40h
0009h
Typical timeout for buffer write 2N s (00h = not supported)
21h
42h
0009h
Typical timeout per individual block erase 2N ms
22h
44h
0013h = 1 Gb
0012h = 512 Mb
0011h = 256 Mb
0010h = 128 Mb
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0003h
Max. timeout for byte/word write 2N times typical
24h
48h
0005h
Max. timeout for buffer write 2N times typical
25h
4Ah
0003h
Max. timeout per individual block erase 2
N times typical
26h
4Ch
0002h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 12.7 Device Geometry Definition
Addresses (x16)
Addresses (x8)
Data
Description
27h
4Eh
001Bh
001Ah
0019h
0018h
Device Size = 2N byte
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0006h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
58h
0001h
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
00xxh
000xh
0000h
000xh
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
31h
32h
33h
34h
62h
64h
66h
68h
0000h
Erase Block Region 2 Information (refer to CFI publication 100)
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
Erase Block Region 3 Information (refer to CFI publication 100)
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
0000h
Erase Block Region 4 Information (refer to CFI publication 100)
相關(guān)PDF資料
PDF描述
S29GL128P10TFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL032N90BFI32 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
S2A SURFACE MOUNT RECTIFIER
S2B SURFACE MOUNT RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P10TFI010 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS
S29GL128P10TFI010-AU 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO
S29GL128P10TFI012 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays
S29GL128P10TFI013 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Tape and Reel
S29GL128P10TFI020 功能描述:閃存 128MB 2.7-3.6V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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