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參數(shù)資料
| 型號(hào)： | S29GL128P10TFI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁(yè)數(shù)： | 64/80頁(yè) |
| 文件大小： | 2706K |
| 代理商： | S29GL128P10TFI010 |
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November 20, 2009 S29GL-P_00_A12
S29GL-P MirrorBit Flash Family
67
Data
She e t
11.7.5
Erase And Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25°C, 3.6 V VCC, 10,000 cycles, checkerboard pattern.
2. Under worst case conditions of -40°C, VCC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 32-word write buffer operation.
4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables 12.1–12.4.
11.7.6
TSOP Pin and BGA Package Capacitance
Notes
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 100 MHz.
Table 11.8 Erase And Programming Performance
Parameter
Typ
Max
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
S29GL128P
64
256
sec
S29GL256P
128
512
S29GL512P
256
1024
S29GL01GP
512
2048
Total Write Buffer Time (Note 3)
480
s
Excludes system level
overhead (Note 5)
Total Accelerated Write Buffer Programming Time
432
s
Chip Program Time
S29GL128P
123
sec
S29GL256P
246
S29GL512P
492
S29GL01GP
984
Table 11.9 Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
10
pF
COUT
Output Capacitance
VOUT = 0
10
12
pF
CIN2
Control Pin Capacitance
VIN = 0
8
10
pF
WP#/ACC
Separated Control Pin
VIN = 0
42
45
pF
RESET#
Separated Control Pin
VIN = 0
25
28
pF
CE#
Separated Control Pin
VIN = 0
22
25
pF
相關(guān)PDF資料 |
PDF描述 |
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| S29GL128P10TFIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL032N90BFI32 | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| S2A | SURFACE MOUNT RECTIFIER |
| S2B | SURFACE MOUNT RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10TFI010 | 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS |
| S29GL128P10TFI010-AU | 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO |
| S29GL128P10TFI012 | 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays |
| S29GL128P10TFI013 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Tape and Reel |
| S29GL128P10TFI020 | 功能描述:閃存 128MB 2.7-3.6V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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