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參數(shù)資料
| 型號(hào)： | S29GL128P10TFI010 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 128M X 1 FLASH 3V PROM, 100 ns, PDSO56 |
| 封裝： | 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56 |
| 文件頁數(shù)： | 62/80頁 |
| 文件大?。?/td> | 2706K |
| 代理商： | S29GL128P10TFI010 |
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November 20, 2009 S29GL-P_00_A12
S29GL-P MirrorBit Flash Family
65
Data
She e t
11.7.4
S29GL-P Alternate CE# Controlled Erase and Program Operations
Notes
1. Not 100% tested.
2. See DC Characteristics on page 56 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications are tested with VIO = 1.8 V and VCC = 3.0 V.
Table 11.7 S29GL-P Alternate CE# Controlled Erase and Program Operations
Parameter
Description
(Notes)
Speed Options
JEDEC
Std.
90
100
110
120
130
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
130
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tELAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVEH
tDS
Data Setup Time
Min
30
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHEL
Read Recovery Time Before Write
(OE# High to CE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
35
ns
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
Typ
480
s
Effective Write Buffer Program Operation (Notes 2, 4)Per Word
Typ
15
s
Effective Accelerated Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
s
Program Operation (Note 2)
Word
Typ
60
s
Accelerated Programming Operation (Note 2)
Word
Typ
54
s
tWHWH2
Typ
0.5
sec
相關(guān)PDF資料 |
PDF描述 |
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| S29GL128P10TFIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL032N90BFI32 | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| S2A | SURFACE MOUNT RECTIFIER |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10TFI010 | 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS |
| S29GL128P10TFI010-AU | 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO |
| S29GL128P10TFI012 | 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays |
| S29GL128P10TFI013 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Tape and Reel |
| S29GL128P10TFI020 | 功能描述:閃存 128MB 2.7-3.6V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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