參數(shù)資料
型號： S29GL128P10TFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù)： 58/80頁
文件大?。?/td> 2706K
代理商： S29GL128P10TFI010
November 20, 2009 S29GL-P_00_A12
S29GL-P MirrorBit Flash Family
61
Data
She e t
11.7.3
S29GL-P Erase and Program Operations
Notes
1. Not 100% tested.
2. See Section 11.6 for more information.
3. For 1–32 words/1–64 bytes programmed.
4. Effective write buffer specification is based upon a 32-word/64-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 110 ns speed option are tested with
VIO = VCC = 2.7 V. AC specifications for 110 ns speed options are tested with VIO = 1.8 V and VCC = 3.0 V.
Table 11.6 S29GL-P Erase and Program Operations
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
100
110
120
130
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
130
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
30
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
480
s
Effective Write Buffer Program Operation (Notes 2, 4)Per Word
Typ
15
s
Accelerated Effective Write Buffer Program Operation
(Notes 2, 4)
Per Word
Typ
13.5
s
Program Operation (Note 2)
Word
Typ
60
s
Accelerated Programming Operation (Note 2)
Word
Typ
54
s
tWHWH2
tWHWH2 Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
35
s
tBUSY
Erase/Program Valid to RY/BY# Delay
Max
90
ns
tSEA
Sector Erase Timeout
Max
50
s
相關PDF資料
PDF描述
S29GL128P10TFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
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S29GL128P10TFI020 功能描述:閃存 128MB 2.7-3.6V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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