參數(shù)資料
型號(hào)： S29GL128P10TFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù)： 21/80頁(yè)
文件大?。?/td> 2706K
代理商： S29GL128P10TFI010
28
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Software Functions and Sample Code
Notes
1. Base = Base Address.
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to
37.
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.
The following is a C source code example of using the write buffer program function. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Write Buffer Programming Command
*/
/* NOTES: Write buffer programming limited to 16 words. */
/*
All addresses to be written to the flash in
*/
/*
one operation must be within the same flash
*/
/*
page. A flash page begins at addresses
*/
/*
evenly divisible by 0x20.
*/
UINT16 *src = source_of_data;
/* address of source data
*/
UINT16 *dst = destination_of_data;
/* flash destination address
*/
UINT16 wc
= words_to_program -1;
/* word count (minus 1)
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)sector_address )
= 0x0025;
/* write write buffer load command */
*( (UINT16 *)sector_address )
= wc;
/* write word count (minus 1)
*/
for (i=0;i<=wc;i++)
{
*dst++ = *src++; /* ALL dst MUST BE in same Write Buffer */
}
*( (UINT16 *)sector_address )
= 0x0029;
/* write confirm command
*/
/* poll for completion */
/* Example: Write Buffer Abort Reset */
*( (UINT16 *)addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)addr + 0x555 ) = 0x00F0;
/* write buffer abort reset
*/
Table 7.7 Write Buffer Program
(LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 555h
Base + 2AAh
0055h
3
Write Buffer Load Command
Write
Sector Address
0025h
4
Write Word Count
Write
Sector Address
Word Count (N–1)h
Number of words (N) loaded into the write buffer can be from 1 to 32 words (1 to 64 bytes).
5 to 36
Load Buffer Word N
Write
Program Address, Word N
Word N
Last
Write Buffer to Flash
Write
Sector Address
0029h
相關(guān)PDF資料
PDF描述
S29GL128P10TFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL032N90BFI32 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
S2A SURFACE MOUNT RECTIFIER
S2B SURFACE MOUNT RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P10TFI010 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS
S29GL128P10TFI010-AU 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO
S29GL128P10TFI012 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays
S29GL128P10TFI013 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Tape and Reel
S29GL128P10TFI020 功能描述:閃存 128MB 2.7-3.6V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*