參數(shù)資料
型號(hào)： S29GL128P10TFI010
廠商： SPANSION LLC
元件分類： PROM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 128M X 1 FLASH 3V PROM, 100 ns, PDSO56
封裝： 20 X 14 MM, LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù)： 19/80頁(yè)
文件大?。?/td> 2706K
代理商： S29GL128P10TFI010
26
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
Software Functions and Sample Code
Note
Base = Base Address.
The following is a C source code example of using the single word program function. Refer to the Spansion
Low Level Driver User’s Guide (available on www.spansion.com) for general information on Spansion Flash
memory software development guidelines.
/* Example: Program Command
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;
/* write unlock cycle 1
*/
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;
/* write unlock cycle 2
*/
*( (UINT16 *)base_addr + 0x555 ) = 0x00A0;
/* write program setup command
*/
*( (UINT16 *)pa )
= data;
/* write data to be programmed
*/
/* Poll for program completion */
7.7.2
Write Buffer Programming
Write Buffer Programming allows the system to write a maximum of 32 words in one programming operation.
This results in a faster effective word programming time than the standard “word” programming algorithms.
The Write Buffer Programming command sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the Write Buffer Load command written at the Sector Address in
which programming occurs. At this point, the system writes the number of “word locations minus 1” that are
loaded into the page buffer at the Sector Address in which programming occurs. This tells the device how
many write buffer addresses are loaded with data and therefore when to expect the “Program Buffer to Flash”
confirm command. The number of locations to program cannot exceed the size of the write buffer or the
operation aborts. (Number loaded = the number of locations to program minus 1. For example, if the system
programs 6 address locations, then 05h should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first address/data
pair to be programmed, and selects the “write-buffer-page” address. All subsequent address/data pairs must
fall within the elected write-buffer-page.
The “write-buffer-page” is selected by using the addresses AMAX–A5.
The “write-buffer-page” addresses must be the same for all address/data pairs loaded into the write buffer.
(This means Write Buffer Programming cannot be performed across multiple “write-buffer-pages.” This also
means that Write Buffer Programming cannot be performed across multiple sectors. If the system attempts to
load programming data outside of the selected “write-buffer-page”, the operation ABORTs.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data pairs into the
write buffer.
Note that if a Write Buffer address location is loaded multiple times, the “address/data pair” counter is
decremented for every data load operation. Also, the last data loaded at a location before the “Program Buffer
to Flash” confirm command is the data programmed into the device. It is the software's responsibility to
comprehend ramifications of loading a write-buffer location more than once. The counter decrements for each
data load operation, NOT for each unique write-buffer-address location. Once the specified number of write
buffer locations have been loaded, the system must then write the “Program Buffer to Flash” command at the
Sector Address. Any other address/data write combinations abort the Write Buffer Programming operation.
The Write Operation Status bits should be used while monitoring the last address location loaded into the
write buffer. This eliminates the need to store an address in memory because the system can load the last
address location, issue the program confirm command at the last loaded address location, and then check
the write operation status at that same address. DQ7, DQ6, DQ5, DQ2, and DQ1 should be monitored to
determine the device status during Write Buffer Programming.
Table 7.6 Single Word/Byte Program
(LLD Function = lld_ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 555h
Base + 2AAh
0055h
Program Setup
Write
Base + AAAh
Base + 555h
00A0h
Program
Write
Byte Address
Word Address
Data
相關(guān)PDF資料
PDF描述
S29GL128P10TFIR10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL128P10TFIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL032N90BFI32 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
S2A SURFACE MOUNT RECTIFIER
S2B SURFACE MOUNT RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128P10TFI010 制造商:Spansion 功能描述:IC SM FLASH 3V 128MB 100NS
S29GL128P10TFI010-AU 制造商:Spansion 功能描述:SPZS29GL128P10TFI010-AU IC 128M PAGE-MO
S29GL128P10TFI012 制造商:Spansion 功能描述:IC 128M PAGE-MODE FLASH MEMORY - Trays
S29GL128P10TFI013 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 56TSOP - Tape and Reel
S29GL128P10TFI020 功能描述:閃存 128MB 2.7-3.6V 100ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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