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參數(shù)資料
| 型號： | S29GL128N90TFIV10 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 8M X 16 FLASH 3V PROM, 90 ns, PDSO56 |
| 封裝： | MO-142BEC, LEAD FREE, TSOP-56 |
| 文件頁數(shù)： | 95/100頁 |
| 文件大?。?/td> | 952K |
| 代理商： | S29GL128N90TFIV10 |
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S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
93
D a t a S h e e t
Revision A2 (January 22, 2004)
Lock Register
Corrected and added new text for Secured Silicon Sector Protection Bit, Persistent Protection
Mode Lock Bit, and Password Protection Mode Lock Bit.
Persistent Sector Protection
Persistent Protection Bit (PPB): Added the second paragraph text about programming the PPB
bit.
Persistent Protection Bit Lock (PPB Lock Bit): Added the second paragraph text about config-
uring the PPB Lock Bit, and fourth paragraph on Autoselect Sector Protection Verification.
Added PPB Lock Bit requirement of 200ns access time.
Passw ord Sector Protection
Corrected 1 μs (built-in delay for each password check) to 2 μs.
Lock Register Command Set Definitions
Added new information for this section.
Passw ord Protection Command Set Definitions
Added new information for this section.
Non-Volatile Sector Protection Command Set Definitions
Added new information for this section.
Global Volatile Sector Protection Freeze Command Set
Added new information for this section.
Volatile Sector Protection Command Set
Added new information for this section.
Secured Silicon Sector Entry Command
Added new information for this section.
Secured Silicon Sector Exit Command
Added new information for this section.
Revision A3 (March 2, 2004)
Connection Diagrams
Removed 56-pin reverse TSOP diagram.
Ordering I nformation
Updated the Standard Products for the S29GL512/256/128N devices and modified the valid
combinations tables.
W ord Program Command Sequence
Added new information to this section.
Lock Register Command Set Definitions
Added new information to this section.
Table 13
Updated this table.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128N90TFIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90TFIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90TFIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90TFIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| S29GL128N90TFIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI010 IC 128M PAGE-MODE F |
| S29GL128P10FAI020 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI020 IC 128M FLASH BGA |
| S29GL128P10FAI022 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Tape and Reel |
| S29GL128P10FAIR20 | 制造商:Spansion 功能描述: |
| S29GL128P10FFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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