參數(shù)資料
型號(hào): S29GL128N11FFI010
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FBGA-64
文件頁(yè)數(shù): 78/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N11FFI010
76
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Key to Switching Waveforms
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
V
IO
0.0 V
0.5 V
IO
0.5 V
IO
V
Output
Measurement Level
Input
Note:
If V
IO
< V
CC
, the input measurement reference level is 0.5 V
IO
.
Figure 10. Input Waveforms and
Measurement Levels
相關(guān)PDF資料
PDF描述
S29GL128N11FFI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI023 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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