參數(shù)資料
型號: S29GL128N11FAIV23
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁數(shù): 86/100頁
文件大?。?/td> 952K
代理商: S29GL128N11FAIV23
84
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
AC Characteristics
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
OE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ2 and DQ6
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command
sequence, last status read cycle, and array data read cycle
Figure 18. Toggle Bit Timings (During Embedded Algorithms)
Note:
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE#
or CE# to toggle DQ2 and DQ6.
Figure 19. DQ2 vs. DQ6
Enter
Embedded
Erasing
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
相關(guān)PDF資料
PDF描述
S29GL128N11FFI010 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FFI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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