參數(shù)資料
型號： S29GL032N90BFI32
廠商： SPANSION LLC
元件分類： PROM
英文描述： 2M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝： 8.15 X 6.15 MM, LEAD FREE, FBGA-48
文件頁數(shù)： 39/81頁
文件大?。?/td> 3095K
代理商： S29GL032N90BFI32
44
S29GL-N MirrorBit Flash Family
S29GL-N_01_12 October 29, 2008
Da ta
Sh e e t
Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address
during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 = 1, DQ7 = DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5= 0. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device
for the next operation.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program
operation is in progress. This flash device is capable of handling multiple write buffer programming operations
on the same write buffer address range without intervening erases. For applications requiring incremental bit
programming, a modified programming method is required; please contact your local Spansion
representative. Any bit in a write buffer address range cannot be programmed from 0 back to a 1.
Attempting to do so may cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read shows that the data is still 0. Only erase
operations can convert a 0 to a 1.
10.4.4
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the
particular product. When the system asserts VHH on the WP#/ACC or ACC pin. The device uses the higher
voltage on the WP#/ACC or ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at
VHH for operations other than accelerated programming, or device damage may result. WP# contains an
internal pull-up; when unconnected, WP# is at VIH.
Figure 10.1 on page 45 illustrates the algorithm for the program operation. Refer to the Erase and Program
Operations–AC Characteristics on page 64 for parameters, and Figure 15.3 on page 65 for timing diagrams.
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相關(guān)代理商/技術(shù)參數(shù)
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S29GL032N90DFI023 功能描述:IC FLASH 32MBIT 90NS 64BGA 制造商:cypress semiconductor corp 系列:GL-N 包裝:剪切帶（CT） 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:32Mb （4M x 8，2M x 16） 寫周期時間 - 字，頁:90ns 訪問時間:90ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:64-LBGA 供應(yīng)商器件封裝:64 球加強型 BGA（9x9） 標準包裝:1
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