- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄299877 > S29GL01GP12FACR13 (SPANSION LLC) 1G X 1 FLASH 3V PROM, 120 ns, PBGA64 PDF資料下載
參數(shù)資料
| 型號(hào)： | S29GL01GP12FACR13 |
| 廠商： | SPANSION LLC |
| 元件分類： | PROM |
| 英文描述： | 1G X 1 FLASH 3V PROM, 120 ns, PBGA64 |
| 封裝： | 13 X 11 MM, 1 MM PITCH, FBGA-64 |
| 文件頁(yè)數(shù)： | 39/80頁(yè) |
| 文件大?。?/td> | 2706K |
| 代理商： | S29GL01GP12FACR13 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)當(dāng)前第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)
44
S29GL-P MirrorBit Flash Family
S29GL-P_00_A12 November 20, 2009
Da ta
Sh e e t
8. There are no means for individually erasing a specific PPB and no specific sector address is
required for this operation.
9. Exit command must be issued after the execution which resets the device to read mode and re-
enables reads and writes for Sector 0.
10. The programming state of the PPB for a given sector can be verified by writing a PPB Status Read
Command to the device as described by the flow chart shown in Figure 8.2.
Figure 8.2 PPB Program Algorithm
Read Byte Twice
Addr = SA0
Enter PPB
Command Set.
Addr = BA
Program PPB Bit.
Addr = SA
DQ5 = 1?
Yes
No
Yes
DQ6 =
Toggle?
DQ6 =
Toggle?
Read Byte.
Addr = SA
PASS
FAIL
Issue Reset
Command
Exit PPB
Command Set
DQ0 =
'0' (Pgm.)?
Read Byte Twice
Addr = SA0
No
Wait 500 s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL128P10TFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TFIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL128P10TFIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL032N90BFI32 | 2M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| S2A | SURFACE MOUNT RECTIFIER |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP12FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1GBIT 128MX8/64MX16 120NS 64BGA - Trays |
| S29GL01GP12FAI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12FAI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12FAI020 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 1GBIT 128MX8/64MX16 120NS 64BGA - Trays |
| S29GL01GP12FAI022 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。