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參數(shù)資料
| 型號： | S268P |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | PIN PHOTO DIODE |
| 封裝： | DIP-8 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 102K |
| 代理商： | S268P |
S268P
Vishay Semiconductors
3 (5)
Rev. 2, 20-May-99
www.vishay.com
Document Number 81538
0.01
0.1
1
0.1
1
10
100
1000
I
–
Reverse
Light
Current
(
A
)
ra
Ee – Irradiance ( mW / cm2 )
10
94 8417
m
VR=5V
l=950nm
Figure 3. Reverse Light Current vs. Irradiance
0.1
1
10
100
1000
EA – Illuminance ( lx )
94 8418
I
–
Reverse
Light
Current
(
A
)
ra
m
101
102
103
104
VR=5V
Figure 4. Reverse Light Current vs. Illuminance
0.1
1
10
1
10
100
VR – Reverse Voltage ( V )
100
94 8419
I
–
Reverse
Light
Current
(
A
)
ra
m
1 mW/cm2
0.5 mW/cm2
0.2 mW/cm2
0.1 mW/cm2
0.05 mW/cm2
l=950nm
Figure 5. Reverse Light Current vs. Reverse Voltage
0.1
1
10
0
20
40
60
80
C
–
Diode
Capacitance
(
pF
)
D
VR – Reverse Voltage ( V )
100
94 8407
E=0
f=1MHz
Figure 6. Diode Capacitance vs. Reverse Voltage
350
550
750
950
0
0.2
0.4
0.6
0.8
1.0
1150
94 8420
S
(
)
–
Relative
Spectral
Sensitivity
rel
l – Wavelength ( nm )
l
Figure 7. Relative Spectral Sensitivity vs. Wavelength
0.4
0.2
0
0.2
0.4
S
–
Relative
Sensitivity
rel
0.6
94 8406
0.6
0.9
0.8
0
°
30
°
10
°
20
°
40
°
50
°
60
°
70
°
80
°
0.7
1.0
Figure 8. Relative Radiant Sensitivity vs.
Angular Displacement
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